SEMICONDUCTOR KDS127E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Low Forward Voltage C A 1 6 2 5 3 4 A1 Small Total Capacitance C Fast Reverse Recovery Time D Ultra- Small Surface Mount Package MAXIMUM RATING (Ta=25 ) P SYMBOL RATING UNIT VRM 80 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current IO 100 * mA IFSM 2* A Power Dissipation PD 200** mW Junction Temperature Tj 150 Tstg -55 150 P 5 J Maximum (Peak) Reverse Voltage P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + H CHARACTERISTIC DIM A A1 B B1 C D H J Surge Current (10ms) Storage Temperature Range 1. D1 ANODE 2. D2 CATHODE 3. D3/D4 ANODE/CATHODE 4. D3 ANODE 5. D4 CATHODE 6. D1/D2 ANODE/CATHODE TES6 * Where D1, D2, D3, D4 are used independently or simultaneously, the Maximum Ratings per diode are 50% of those of the single diode. ** Total Rating EQUIVALENT CIRCUIT (TOP VIEW) Marking 6 6 5 4 D4 D3 D1 1 Type Name 4 5 US D2 2 3 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=100mA - - 1.2 V Reverse Current IR VR=80V - - 0.1 A Total Capacitance CT VR=6V, f=1MHz - - 3.5 pF 2007. 10. 31 Revision No : 0 1/3 KDS127E IF - VF 100 FORWARD CURRENT IF (mA) FORWARD CURRENT IF (mA) IF - VF Ta=25 C 10 D1, D3 1 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 D2, D4 1 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V) FORWARD VOLTAGE VF (V) IR - VR IR - VR 1.2 1 REVERSE CURRENT IR (nA) REVERSE CURRENT IR (nA) 10 0 Ta=25 C 0.1 0.01 D1, D3 0.001 Ta=25 C 0.1 0.01 D2, D4 0.001 0 10 20 30 40 50 60 70 80 20 30 40 50 60 REVERSE VOLTAGE VR (V) CT - VR CT - VR f=1MHz Ta=25 C 1 D1, D3 0.1 5 10 REVERSE VOLTAGE VR (V) 10 0 0 TOTAL CAPACITANCE CT (pF) TOTAL CAPACITANCE CT (pF) Ta=25 C 1.2 1 10 15 20 25 30 35 REVERSE VOLTAGE VR (V) 2007. 10. 31 100 Revision No : 0 40 45 70 80 10 f=1MHz Ta=25 C 1 D2, D4 0.1 0 5 10 15 20 25 30 35 40 45 REVERSE VOLTAGE VR (V) 2/3 KDS127E POWER DISSIPATION P (mW) P - Ta 240 200 160 120 80 40 0 -40 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2007. 10. 31 Revision No : 0 3/3