KEC KDS127E

SEMICONDUCTOR
KDS127E
TECHNICAL DATA
SILICON EPITAXIAL PLANAR DIODE
ULTRA HIGH SPEED SWITCHING APPLICATION.
B
B1
FEATURES
Low Forward Voltage
C
A
1
6
2
5
3
4
A1
Small Total Capacitance
C
Fast Reverse Recovery Time
D
Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25
)
P
SYMBOL
RATING
UNIT
VRM
80
V
Reverse Voltage
VR
80
V
Maximum (Peak) Forward Current
IFM
300 *
mA
Average Forward Current
IO
100 *
mA
IFSM
2*
A
Power Dissipation
PD
200**
mW
Junction Temperature
Tj
150
Tstg
-55 150
P
5
J
Maximum (Peak) Reverse Voltage
P
MILLIMETERS
_ 0.05
1.6 +
_ 0.05
1.0 +
_ 0.05
1.6 +
_ 0.05
1.2 +
0.50
_ 0.05
0.2 +
_ 0.05
0.5 +
_ 0.05
0.12 +
H
CHARACTERISTIC
DIM
A
A1
B
B1
C
D
H
J
Surge Current (10ms)
Storage Temperature Range
1. D1 ANODE
2. D2 CATHODE
3. D3/D4 ANODE/CATHODE
4. D3 ANODE
5. D4 CATHODE
6. D1/D2 ANODE/CATHODE
TES6
* Where D1, D2, D3, D4 are used independently or simultaneously,
the Maximum Ratings per diode are 50% of those of the single diode.
** Total Rating
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
6
6
5
4
D4
D3
D1
1
Type Name
4
5
US
D2
2
3
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF
IF=100mA
-
-
1.2
V
Reverse Current
IR
VR=80V
-
-
0.1
A
Total Capacitance
CT
VR=6V, f=1MHz
-
-
3.5
pF
2007. 10. 31
Revision No : 0
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KDS127E
IF - VF
100
FORWARD CURRENT IF (mA)
FORWARD CURRENT IF (mA)
IF - VF
Ta=25 C
10
D1, D3
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
D2, D4
1
0.1
0.01
0.001
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE VF (V)
FORWARD VOLTAGE VF (V)
IR - VR
IR - VR
1.2
1
REVERSE CURRENT IR (nA)
REVERSE CURRENT IR (nA)
10
0
Ta=25 C
0.1
0.01
D1, D3
0.001
Ta=25 C
0.1
0.01
D2, D4
0.001
0
10
20
30
40
50
60
70
80
20
30
40
50
60
REVERSE VOLTAGE VR (V)
CT - VR
CT - VR
f=1MHz
Ta=25 C
1
D1, D3
0.1
5
10
REVERSE VOLTAGE VR (V)
10
0
0
TOTAL CAPACITANCE CT (pF)
TOTAL CAPACITANCE CT (pF)
Ta=25 C
1.2
1
10
15
20
25
30
35
REVERSE VOLTAGE VR (V)
2007. 10. 31
100
Revision No : 0
40
45
70
80
10
f=1MHz
Ta=25 C
1
D2, D4
0.1
0
5
10
15
20
25
30
35
40
45
REVERSE VOLTAGE VR (V)
2/3
KDS127E
POWER DISSIPATION P (mW)
P - Ta
240
200
160
120
80
40
0
-40
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2007. 10. 31
Revision No : 0
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