SEMICONDUCTOR KDS165T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage. E Fast Reverse Recovery Time. B Small Total Capacitance. 1 DIM MILLIMETERS _ 0.2 A 2.9 + 4 B 1.6+0.2/-0.1 _ 0.05 0.70 + A F C 3 RATING UNIT VRM 85 V VR 80 V Maximum (Peak) Forward Current IFM * 300 mA Average Forward Current IO * 100 mA Surge Current (10ms) IFSM * 2 A Power Dissipation PD ** 900 mW Tj 150 Tstg -55 150 Maximum (Peak) Reverse Voltage Reverse Voltage Junction Temperature Storage Temperature Range * : Unit Rating. (Total Rating=Unit Rating 1.5) ** : Total rating, Package mounted on a ceramic board (600 0.8 2.8+0.2/-0.3 _ 0.2 1.9 + _ 0.05 0.16 + 0.00-0.10 0.25+0.3/-0.15 _ 0.1 0.60 + _ 0.1 0.55 + K SYMBOL G H I CHARACTERISTIC C ) _ 0.1 0.4 + E F G H I J K 4 I MAXIMUM RATING (Ta=25 D 2 D 3 D1 D2 1 2 TSQ ) Marking 4 Type Name 3 G 3 2 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Lot No. ) SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.60 - VF(2) IF=10mA - 0.72 - VF(3) IF=100mA - 0.90 1.20 UNIT V Reverse Current IR VR=80V - - 0.5 A Total Capacitance CT VR=0, f=1MHz - 0.9 3.0 pF Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS 2005. 6. 21 Revision No : 0 1/2 KDS165T I F - VF 10 REVERSE CURRENT I R (µA) 3 10 FORWARD CURRENT I F (mA) I R - VR 2 10 Ta = 10 0 C Ta =2 Ta 5 C =-2 5 C 10 1 10 10 -1 -2 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=100 C 1 Ta=75 C 10 -1 10 -2 10 -3 Ta=50 C Ta=25 C 0 20 40 t rr TOTAL CAPACITANCE CT (pF) REVERSE RECOVERY TIME t rr (ns) C T - VR f=1MHz Ta=25 C 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 80 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (V) 2.0 60 30 100 - IF 100 Ta=25 C Fig. 1 50 30 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT I F (mA) REVERSE VOLTAGE VR (R) Fig. 1. REVERSE RECOVERY TIME(t rr ) TEST CIRCUIT INPUT WAVEFORM INPUT 0.01µF DUT WAVEFORM 50Ω -6V 2kΩ 50Ω 0 OUTPUT SAMPLING OSCILLOSCOPE (RIN =50Ω) I F =10mA 0 0.1 I R IR 50ns E t rr PULSE GENERATOR (R OUT =50Ω) 2005. 6. 21 Revision No : 0 2/2