KEC KRC884T

SEMICONDUCTOR
KRC881T~KRC886T
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
E
K
FEATURES
1
6
G
2
5
G
High emitter-base voltage : VEBO=25V(Min)
K
B
3
4
DIM
A
B
C
D
E
A
Low on resistance : Ron=1 (Typ.) (IB=5mA)
F
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
With Built-in Bias Resistors.
D
Simplify Circuit Design.
EQUIVALENT CIRCUIT
L
C
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT (TOP VIEW)
I
J
6
C
5
4
1.
2.
3.
4.
5.
6.
R1
B
Q1
E
MAXIMUM RATING (Ta=25
1
Q2
2
Q1
Q1
Q2
Q2
Q2
Q1
J
F
G
MILLIMETERS
_ 0.2
2.9 +
1.6+0.2/-0.1
_ 0.05
0.70 +
_ 0.1
0.4 +
2.8+0.2/-0.3
_ 0.2
1.9 +
0.95
H
I
_ 0.05
0.16 +
0.00-0.10
J
0.25+0.25/-0.15
K
L
0.60
0.55
H
EMITTER
BASE
COLLECTOR
EMITTER
BASE
COLLECTOR
TS6
3
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
25
V
IC
300
mA
PC *
0.9
W
Tj
150
Tstg
-55 150
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
0.8
)
MARK SPEC
TYPE
hFE classification
B
Marking
KRC881T
MQB
h FE Rank
KRC882T
MRB
KRC883T
MSB
KRC884T
MTB
KRC885T
MUB
KRC886T
MVB
2002. 12. 5
Revision No : 2
6
5
4
1
2
3
Lot No.
Type Name
1/2
KRC881T~KRC886T
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
20
-
-
V
Collector-Base Breakdown Voltage
BVCBO
IC=50 A
50
-
-
V
Emitter-Base Breakdown Voltage
BVEBO
IE=50 A
25
-
-
V
VCB=50V, IE=0
-
-
0.1
A
VCE(sat)
IC=30mA, IB=3mA
-
-
0.1
V
hFE
VCE=2V, IC=4mA
350
-
1200
KRC881T
-
2.2
-
KRC882T
-
4.7
-
-
5.6
-
-
6.8
-
KRC885T
-
10
-
KRC886T
-
22
-
ICBO
Collector Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Gain
KRC883T
Input Resistor
KRC884T
R1
k
Transition Frequency
fT *
VCE=6V, IC=4mA,
-
30
-
MHz
Collector Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
4.8
-
pF
* Characteristic of Transistor Only.
Note) hFE Classification
2002. 12. 5
B:350 1200
Revision No : 2
2/2