SEMICONDUCTOR KTC3553T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E FEATURES B K DIM A B ᴌAdoption of MBIT Processes. 1 C 3 D D G ᴌUltrasmall-Sized Package permitting applied sets to be 2 F A ᴌLow Collector-to-Emitter Saturation Voltage. G ᴌHigh Current Capacitance. made small and slim. CHARACTERISTIC L J SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V DC IC 5 Pulse ICP 7 IB 1.2 A PC * 0.9 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I C ᴌComplementary to KTA1553T. MAXIMUM RATING (Ta=25ᴱ) E F G H I J K L ᴌHigh Allowable Power Dissipation. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE 3. COLLECTOR A TSM Marking Lot No. HM Type Name * Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 Ọ A Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 Ọ A Collector-Base Breakdown Voltage V(BR)CBO IC=10ỌA, IE=0 60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 50 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10ỌA, IC=0 6 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=40mA - 100 150 mV Base-Emitter Saturation Voltage VBE(sat) IC=2A, IB=40mA - 0.80 1.2 V DC Current Gain hFE VCE=2V, IC=500mA 200 - 560 Transition Frequency fT VCE=10V, IC=500mA - 330 - MHz VCB=10V, f=1MHz - 26 - pF - 32 - - 420 - - 28 - Collector Output Capacitance Turn-On Time Cob PW=20µs DC <= 1% ton INPUT Swiitching Time Storage Time tstg IB1 I B2 RB 50Ω tf 24Ω VR 100µF Fall Time OUTPUT nS 470µF V BE =-5V VCC =12V 20IB1=-20IB2=IC =2.5A 2001. 6. 28 Revision No : 0 1/3 KTC3553T h FE - I C I C - V CE 1K 40mA 30mA 90mA 80mA 70mA 60mA 10mA 2 1 IB=0mA 0 100 200 300 400 Ta=25 C Ta=-25 C 100 50 30 10 0.01 500 VCE =2V 0.03 0.05 0.1 COLLECTOR-EMITTER VOLTAGE VCE (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 500 300 100 75 25 Ta= 10 0.01 C = Ta 30 0.03 0.05 0.1 =Ta 25 C C 0.3 0.5 1 3 5 2k 50 30 75 Ta= 5 C 10 0.01 0.03 0.05 0.1 0.3 0.5 1 Ta=-25 C Ta=75 C 300 0.3 0.5 1 Revision No : 0 3 5 VCE =2V 0.9 0.8 0.7 0.6 Ta=75 C COLLECTOR CURRENT I C (A) BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 3K COLLECTOR CURRENT I C (A) 2001. 6. 28 5 C -2 Ta= Ta=2 1.0 IC /IB =50 0.03 0.05 0.1 C COLLECTOR CURRENT I C (A) 5K 100 0.01 5 100 I C - V BE 10K Ta=25 C 3 500 300 VBE(sat) - I C 500 5 I C /I B =50 1k COLLECTOR CURRENT I C (A) 1K 3 VCE(sat) - I C I C /I B =20 50 1 COLLECTOR CURRENT I C (A) VCE(sat) - I C 1K 0.3 0.5 0.5 0.4 C 0 Ta=75 C 300 Ta=-25 3 20mA 500 Ta=25 C 4 DC CURRENT GAIN h FE 0m A 50mA 10 COLLECTOR CURRENT I C (A) 5 0.3 0.2 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTC3553T 1K C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) f T - IC VCE =10V 500 300 100 50 30 10 0.01 0.03 0.05 0.1 0.3 0.5 1 3 1K f=1MHz 500 300 100 50 30 10 1 5 COLLECTOR CURRENT I C (A) 5 3 10 3 0 50 COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA 0.1 0.05 0.03 0.01 0.1 0m S* 0.5 0.3 10 S* 0µ DC m 0µ 10 COLLECTOR POWER DISSIPATION PC (W) 10 I C MAX (CONTINUOUS) 50 1 S* 5 3 Pc - Ta IC MAX.(PULSED) 1m COLLECTOR CURRENT I C (A) 10 S* S* OP ER AT IO N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 `0.8mm) 0.3 1 3 10 30 100 1.2 MOUNTED ON A CERAMIC BOARD 1.0 (600mm 2 `0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 28 Revision No : 0 3/3