SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. ・Complementary to the KTN2907U/2907AU. MAXIMUM RATING (Ta=25℃) RATING CHARACTERISTIC SYMBOL UNIT KTN2222U KTN2222AU Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 5 6 V Collector Current Collector Power Dissipation (Ta=25℃) Junction Temperature Storage Temperature Range IC 600 mA PC 100 mW Tj 150 ℃ Tstg -55～150 ℃ MARK SPEC TYPE MARK KTN2222U Z B KTN2222AU Z G 2008. 8. 29 Revision No : 3 1/5 KTN2222U/AU ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current SYMBOL KTN2222AU KTN2222U Collector Cut-off Current KTN2222AU Emitter Cut-off Current KTN2222AU Collector-Base KTN2222U Breakdown Voltage KTN2222AU Collector-Emitter * KTN2222AU Emitter-Base KTN2222U Breakdown Voltage KTN2222AU 10 nA VCB=50V, IE=0 - - 0.01 VCB=60V, IE=0 - - 0.01 IEBO VEB=3V, IC=0 - - 10 V(BR)CBO 60 - - IC=10μA, IE=0 75 - - 30 - - 40 - - 5 - - 6 - - ICBO V(BR)CEO V(BR)EBO IE=10mA, IB=0 IE=10μA, IC=0 hFE(2) IC=1mA, VCE=10V 50 - - KTN2222AU hFE(3) IC=10mA, VCE=10V 75 - - hFE(4) IC=150mA, VCE=10V 100 - 300 hFE(5) IC=500mA, VCE=10V 30 - - 40 - - VCE(sat)1 IC=150mA, IB=15mA - - 0.4 - - 0.3 - - 1.6 - - 1 - - 1.3 0.6 - 1.2 - - 2.6 - - 2.0 VCE=20V, IC=20mA, 250 - - f=100MHz 300 - - - - 8 - - 30 - - 25 KTN2222AU μA nA V KTN2222U V V V KTN2222AU KTN2222U Saturation Voltage - - KTN2222U * - - KTN2222U Base-Emitter VCE=60V, VEB(OFF)=3V 35 KTN2222AU * UNIT IC=0.1mA, VCE=10V * Saturation Voltage MAX. hFE(1) KTN2222U Collector-Emitter TYP. KTN2222U Breakdown Voltage DC Current Gain MIN. ICEX TEST CONDITION KTN2222AU VCE(sat)2 IC=500mA, IB=50mA VBE(sat)1 IC=150mA, IB=15mA V KTN2222U KTN2222AU KTN2222U Transition Frequency KTN2222AU Collector Output Capacitance VBE(sat)2 fT IC=500mA, IB=50mA Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz KTN2222U Input Capacitance KTN2222AU MHz pF pF * Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%. 2008. 8. 29 Revision No : 3 2/5 KTN2222U/AU ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Input Impedance Voltage Feedback Ratio Small-Singal Current Gain Collector Output Admittance KTN2222AU KTN2222AU KTN2222AU KTN2222AU SYMBOL hie hre hfe hoe Collector-Base Time Constant KTN2222AU Cc・rbb' Noise Figure KTN2222AU NF Switching Time 2008. 8. 29 TEST CONDITION MIN. TYP. MAX. IC=1mA, VCE=10V, f=1kHz 2 - 8 IC=10mA, VCE=10V, f=1kHz 0.25 - 1.25 IC=1mA, VCE=10V, f=1kHz - - 8 IC=10mA, VCE=10V, f=1kHz - - 4 IC=1mA, VCE=10V, f=1kHz 50 - 300 IC=10mA, VCE=10V, f=1kHz 75 - 375 IC=1mA, VCE=10V, f=1kHz 5 - 35 IC=10mA, VCE=10V, f=1kHz 25 - 200 - - 150 pS - - 4 dB IE=20mA, VCB=20V, f=31.8MHz IC=100μA, VCE=10V, Rg=1kΩ, f=1kHz kΩ x10-4 Delay Time td VCC=30V, VBE(OFF)=0.5V - - 10 Rise Time tr IC=150mA, IB1=15mA - - 25 Storage Time tstg VCC=30V, IC=150mA - - 225 Fall Time tf IB1=-IB2=15mA - - 60 Revision No : 3 UNIT Ω μ nS 3/5 KTN2222U/AU 2008. 8. 29 Revision No : 3 4/5 KTN2222U/AU 2008. 8. 29 Revision No : 3 5/5