SEMICONDUCTOR 2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA(Max.), IBL=-50nA(Max.) 1 6 2 5 3 4 A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage P : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. CHARACTERISTIC 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range P 5 J : Cob=4.5pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + H Low Collector Output Capacitance P DIM A A1 B B1 C D H J EMITTER BASE BASE COLLECTOR EMITTER COLLECTOR TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 Q1 4 Q2 * Total Rating 1 2 Marking 3 Type Name ZA 2002. 9. 17 Revision No : 0 1/4 2N2906E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5.0 - - V hFE(1) VCE=-1V, IC=-0.1mA 60 - - hFE(2) VCE=-1V, IC=-1mA 80 - - hFE(3) VCE=-1V, IC=-10mA 100 - 300 hFE(4) VCE=-1V, IC=-50mA 60 - - hFE(5) VCE=-1V, IC=-100mA 30 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4 VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85 VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95 250 - - MHz DC Current Gain * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * * fT Transition Frequency V V VCE=-20V, IC=-10mA, f=100MHz Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF Input Capacitance Cib VBE=-0.5V, IC=0, f=1MHz - - 10 pF Input Impedance hie 2.0 - 12 k Voltage Feedback Ratio hre 1.0 - 10 x10-4 Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 3.0 - 60 Noise Figure NF - - 4.0 - - 35 - - 35 VCE=-10V, IC=-1mA, f=1kHz VCE=-5V, IC=-0.1mA, Rg=1k , f=10Hz 15.7kHz dB td Rise Time tr 10kΩ V in 275Ω Vout Delay Time C Total 4pF VCC =-3.0V 0 t r ,t f < 1ns, Du=2% 0.5V -10.6V 300ns Switching Time nS Storage Time tstg 10kΩ V in 1N916 or equiv. Fall Time tf 275Ω Vout VCC =-3.0V 0 t r ,t f < 1ns, Du=2% 9.1V -10.9V - - 225 - - 75 C Total 4pF 20µs * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2002. 9. 17 Revision No : 0 2/4 2N2906E -100 -0.9 -1 DC CURRENT GAIN h FE -80 -0.6 -0.5 -60 -0.4 -0.3 -40 -0.2 IB =-0.1mA -20 COMMON EMITTER Ta=25 C 0 -1 -2 -3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Ta=-55 C -0.5 Ta=25 C Ta=125 C -0.3 -0.3 -1 -3 -10 -30 -100 -300 50 30 -0.3 -1 -3 -10 -30 -100 -1 -0.3 -0.1 25 C Ta=1 -0.05 Ta=25 C Ta=-55 C -0.03 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) I C - VBE VCE - I B -40 0 -0.4 -0.8 -1.2 BASE-EMITTER VOLTAGE V BE (V) Revision No : 0 -1.6 -0.6 I C =30mA IC =10mA -0.8 I C =100mA 5 C Ta=25 C Ta=55 C Ta=12 -80 -300 -1.0 IC =1mA COMMON EMITTER VCE =-1V -300 COMMON EMITTER I C /I B =10 -0.5 COLLECTOR CURRENT I C (mA) -120 2002. 9. 17 Ta=-55 C VCE(sat) - I C -1 0 Ta=25 C 100 VBE(sat) - I C -3 -160 Ta=125 C COLLECTOR CURRENT I C (mA) -5 -200 300 10 -0.1 -4 COMMON EMITTER I C /I E =10 -0.1 -0.1 COMMON EMITTER VCE =-1V 500 COLLECTOR-EMITTER VOLTAGE VCE (V) -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 1k -0.8 -0.7 0 COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) I C - VCE -0.4 -0.2 COMMON EMITTER Ta=25 C 0 -0.001 -0.01 -0.1 -1 -10 BASE CURRENT I B (mA) 3/4 C ob - VCB , C ib - VEB 50 f=1MHz Ta=25 C CAPACITANCE C ob (pF) C ib (pF) 30 10 C ob C ib 5 3 1 0.5 -0.1 -0.3 -1 -3 -10 REVERSE VOLTAGE V CB (V) V EB (V) 2002. 9. 17 Revision No : 0 -30 COLLECTOR POWER DISSIPATION PC (mW) 2N2906E Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 4/4