SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current : ICEX=50nA(Max.), IBL=50nA(Max.) N E K @VCE=30V, VEB=3V. G D J Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. H CHARACTERISTIC ) RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Base Current IB 50 mA 625 mW 1.5 W Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range 2002. 2. 1 C 2 3 1. EMITTER 2. BASE 3. COLLECTOR SYMBOL Collector Power 1 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L Complementary to 2N3906A. MAXIMUM RATING (Ta=25 F F DIM A B C D E F G H J K L M N PC Tj 150 Tstg -55 150 Revision No : 0 TO-92 1/5 2N3904A ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA Base Cut-off Current IBL VCE=30V, VEB=3V - - 50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=10 A, IE=0 60 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V hFE(1) VCE=1V, IC=0.1mA 40 - - hFE(2) VCE=1V, IC=1mA 70 - - hFE(3) VCE=1V, IC=10mA 100 - 300 hFE(4) VCE=1V, IC=50mA 60 - - hFE(5) VCE=1V, IC=100mA 30 - 60 VCE(sat)1 IC=10mA, IB=1mA - - 0.2 VCE(sat)2 IC=50mA, IB=5mA - - 0.3 VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85 VBE(sat)2 IC=50mA, IB=5mA - - 0.95 300 - - MHz DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * fT Transition Frequency VCE=20V, IC=10mA, f=100MHz V V Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 8.0 pF Input Impedance hie 1.0 - 10 k Voltage Feedback Ratio hre 0.5 - 8.0 x10-4 Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 1.0 - 40 Noise Figure NF - - 5.0 VCE=10V, IC=1mA, f=1kHz VCE=5V, IC=0.1mA Rg=1k , dB f=10Hz 15.7kHz Delay Time td - - 35 Rise Time tr - - 35 Switching Time nS Storage Time tstg - - 200 Fall Time tf - - 50 * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2002. 2. 1 Revision No : 0 2/5 2N3904A 2002. 2. 1 Revision No : 0 3/5 2N3904A 2002. 2. 1 Revision No : 0 4/5 2N3904A 2002. 2. 1 Revision No : 0 5/5