SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) N K @VCE=-30V, VEB=-3V. E G Excellent DC Current Gain Linearity. J D Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. Low Collector Output Capacitance H F F : Cob=4.5pF(Max.) @VCB=5V. 2 3 C 1 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L Complementary to 2N3904C. DIM A B C D E F G H J K L M N 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA 625 mW 1.5 W Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range 2002. 2. 20 PC Tj 150 Tstg -55 150 Revision No : 1 TO-92 1/2 2N3906C ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5.0 - - V hFE(1) VCE=-1V, IC=-0.1mA 60 - - hFE(2) VCE=-1V, IC=-1mA 80 - - hFE(3) VCE=-1V, IC=-10mA 100 - 300 hFE(4) VCE=-1V, IC=-50mA 60 - - hFE(5) VCE=-1V, IC=-100mA 30 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4 VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85 VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95 250 - - MHz DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * fT Transition Frequency VCE=-20V, IC=-10mA, f=100MHz V V Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF Input Capacitance Cib VBE=-0.5V, IC=0, f=1MHz - - 10 pF Input Impedance hie 2.0 - 12 k Voltage Feedback Ratio hre 1.0 - 10 x10-4 Small-Signal Current Gain hfe 100 - 400 Collector Output Admittance hoe 3.0 - 60 Noise Figure NF - - 4.0 - - 35 - - 35 VCE=-10V, IC=-1mA, f=1kHz VCE=-5V, IC=-0.1mA, Rg=1k , f=10Hz 15.7kHz dB Delay Time Rise Time tr 10kΩ V in 275Ω Vout td C Total 4pF VCC =-3.0V 0 t r ,t f < 1ns, Du=2% 0.5V -10.6V 300ns Switching Time nS Storage Time tstg 10kΩ V in 1N916 or equiv. Fall Time tf 9.1V 275Ω Vout - 225 - - 75 VCC =-3.0V 0 t r ,t f < 1ns, Du=2% -10.9V C Total 4pF 20µs * Pulse Test : Pulse Width 300 S, Duty Cycle 2%. 2002. 2. 20 Revision No : 1 2/2