KEC 2N3906C_02

SEMICONDUCTOR
2N3906C
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
C
A
FEATURES
Low Leakage Current
: ICEX=-50nA(Max.), IBL=-50nA(Max.)
N
K
@VCE=-30V, VEB=-3V.
E
G
Excellent DC Current Gain Linearity.
J
D
Low Saturation Voltage
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance
H
F
F
: Cob=4.5pF(Max.) @VCB=5V.
2
3
C
1
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
0.55 MAX
2.30
0.45 MAX
1.00
M
L
Complementary to 2N3904C.
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Base Current
IB
-50
mA
625
mW
1.5
W
Collector Power
Ta=25
Dissipation
Tc=25
Junction Temperature
Storage Temperature Range
2002. 2. 20
PC
Tj
150
Tstg
-55 150
Revision No : 1
TO-92
1/2
2N3906C
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICEX
VCE=-30V, VEB=-3V
-
-
-50
nA
Base Cut-off Current
IBL
VCE=-30V, VEB=-3V
-
-
-50
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10 A, IE=0
-40
-
-
V
Collector-Emitter Breakdown Voltage *
V(BR)CEO
IC=-1mA, IB=0
-40
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10 A, IC=0
-5.0
-
-
V
hFE(1)
VCE=-1V, IC=-0.1mA
60
-
-
hFE(2)
VCE=-1V, IC=-1mA
80
-
-
hFE(3)
VCE=-1V, IC=-10mA
100
-
300
hFE(4)
VCE=-1V, IC=-50mA
60
-
-
hFE(5)
VCE=-1V, IC=-100mA
30
-
-
VCE(sat)1
IC=-10mA, IB=-1mA
-
-
-0.25
VCE(sat)2
IC=-50mA, IB=-5mA
-
-
-0.4
VBE(sat)1
IC=-10mA, IB=-1mA
-0.65
-
-0.85
VBE(sat)2
IC=-50mA, IB=-5mA
-
-
-0.95
250
-
-
MHz
DC Current Gain
*
Collector-Emitter Saturation Voltage
*
Base-Emitter Saturation Voltage
*
fT
Transition Frequency
VCE=-20V, IC=-10mA, f=100MHz
V
V
Collector Output Capacitance
Cob
VCB=-5V, IE=0, f=1MHz
-
-
4.5
pF
Input Capacitance
Cib
VBE=-0.5V, IC=0, f=1MHz
-
-
10
pF
Input Impedance
hie
2.0
-
12
k
Voltage Feedback Ratio
hre
1.0
-
10
x10-4
Small-Signal Current Gain
hfe
100
-
400
Collector Output Admittance
hoe
3.0
-
60
Noise Figure
NF
-
-
4.0
-
-
35
-
-
35
VCE=-10V, IC=-1mA, f=1kHz
VCE=-5V, IC=-0.1mA,
Rg=1k
, f=10Hz 15.7kHz
dB
Delay Time
Rise Time
tr
10kΩ
V in
275Ω
Vout
td
C Total 4pF
VCC =-3.0V
0
t r ,t f < 1ns, Du=2%
0.5V
-10.6V
300ns
Switching Time
nS
Storage Time
tstg
10kΩ
V in
1N916
or equiv.
Fall Time
tf
9.1V
275Ω
Vout
-
225
-
-
75
VCC =-3.0V
0
t r ,t f < 1ns, Du=2%
-10.9V
C Total 4pF
20µs
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2002. 2. 20
Revision No : 1
2/2