SEMICONDUCTOR PG05DBEL2 TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES 2 1 ・30 Watts peak pulse power (tp=8/20μs) E ・Transient protection for data lines to A J IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-5(Lightning) 2A(tp=8/20μs) F I H 2 ・Bidirectional Type Pin Configuration Structure. G 1 B D G ・Small package for use in portable electronics. DIM A B C D E F G ・Suitable replacement for Multi-Layer Varistors in ESD protection applications. ・Protects one I/O or power line. C ・Low clamping voltage. ・Low leakage current. 1. ANODE 2. CATHCDE H MILLIMETERS _ 0.05 0.6 + _ 0.05 0.3 + _ 0.05 0.28 + _ 0.05 0.25 + _ 0.05 0.18 + Typ 0.36 _ 0.02 0.025 + _ 0.05 0.2 + I Max 0.3 J Typ 0.1 APPLICATIONS ・Cell phone handsets and accessories. ・Microprocessor based equipment. ELP-2 ・Personal digital assistants (PDA s) ・Notebooks, desktops, & servers. ・Portable instrumentation. ・Pagers peripherals. Marking 6 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT PPK 30 W Junction Temperature Tj -55～150 ℃ Storage Temperature Tstg -55～150 ℃ Peak Pulse Power (tp=8/20μs) ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakedown Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V 5.8 - 7.8 V VBR It=1mA Reverse Leakage Current IR VRWM=5V - - 5 μA Clamping Voltage VC IPP=2A, tp=8/20μs - - 15 V Junction Capacitance CJ VR=0V, f=1MHz - 5 9 pF 2012. 8. 20 Revision No : 0 1/1 PG05DBEL2 2012. 8. 20 Revision No : 0 2/2