SEMICONDUCTOR PG12NSSMC TECHNICAL DATA Single Line TVS Diode for ESD Protection Protection of Voltage Sensitive Components. FEATURES Low profile package. B C Transient protection for data line to 2 1 A APPLICATIONS Devices for Unidirectional Applications. D Automotive Controller. Notebooks, Desktops, & Servers. F G H E E DIM A B C D E F G H MILLIMETERS 6.60 ~ 7.11 5.59 ~ 6.22 2.92 ~ 3.07 7.75 ~ 8.13 0.76 ~ 1.52 2.00 ~ 2.62 0.15 ~ 0.31 0.10 ~ 0.20 1. ANODE 2. CATHODE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Power (tp=10/1000 s) PPK 1500 W Peak Pulse Current (tp=10/1000 s) IPP 75.4 A Operating Temperature Tj -55 150 Tstg -55 150 SMC Storage Temperature * Notes) : (1) Derated above Ta=25 per power derating curve. Marking (2) Mounted on 0.31 0.31 (8.0 8.0 ) copper pads to each terminal. (3) Mounted on minimum recommened pad lay out Type Name T12 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 12 V 13.3 - 14.7 V VBR Reverse Breakdown Voltage It=1.0mA Reverse Leakage Current IR VRWM=12V - - 5.0 A Clamping Voltage VC IPP=75.4A, tp=10/1000 s - - 19.9 V 2007. 6. 8 Revision No : 1 1/2 PG12NSSMC POWER DERATION CURVE 120 100 RATED POWER OR IPP (%) PEAK PULSE POWER PPK (kW) NON-REPETITIVE PEAK PULSE POWER vs. PULSE TIME 10 1 0.1 0.1µ 100 80 60 40 20 0 1.0µ 10µ 100µs 1.0ms 10ms PULSE DURATION tP (sec) 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) PEAK PULSE CURRENT IPP (%) PULSE WAVEFORM 120 =10µs 100 PEAK VALUE Ippm 80 60 HALF VALUE Ipp/2 40 20 td 0 0 1 2 3 4 5 TIME (ms) 2007. 6. 8 Revision No : 1 2/2