SEMICONDUCTOR PZTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. A H L 2 FEATURES High Breakdown Voltage. E Collector Power Dissipation : PC=2W(TC=25 ) K B 1 J 3 G F MAXIMUM RATING (Ta=25 F ) CHARACTERISTIC SYMBOL RATING UNIT VCBO 500 V Collector-Base Voltage 1 2 DIM A 3 C B D Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V IC 300 mA Collector Current Collector Power Dissipation (TC=25 ) Junction Temperature Storage Temperature Range 2 Tj 150 Tstg -55 150 CHARACTERISTIC 2. COLLECTOR (HEAT SINK) C 1.8 MAX D E 0.7+0.15/-0.1 _ 0.3 7+ F G 2.3 TYP 0.26+0.09/-0.02 H 3.0+0.15/-0.1 _ 0.25 1.75 + J K L 3. EMITTER PC ELECTRICAL CHARACTERISTICS (Ta=25 1. BASE MILLIMETERS _ 0.2 6.5 + _ 0.2 3.5 + W 0.1 MAX 10 MAX SOT-223 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO IC=100 A, IE=0 500 - - V Collector-Emitter Breakdown Voltage (1) V(BR)CEO IC=1mA, IB=0 400 - - V Collector-Emitter Breakdown Voltage (2) V(BR)CES IC=100 A, IB=0 400 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 6.0 - - V - - 100 nA - - 500 nA - - 100 nA VCE=10V, IC=1mA 40 - - VCE=10V, IC=10mA 50 - 200 VCE=10V, IC=50mA 45 - - VCE=10V, IC=100mA 40 - - Collector Cut off Current ICBO Collector Cut off Current ICES Emitter Cutoff Current IEBO DC Current Gain hFE * Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage * * VCB=400V, IE=0 VCB=320V, IE=0 VCE=400V, IB=0 VCE=320V, IB=0 VEB=4V, IC=0 VCE(sat) IC=10mA, IB=1mA - - 0.5 V VBE(sat) IC=10mA, IB=1mA - - 0.75 V VCB=20V, IE=0, f=1MHz - - 7 pF Cob Collector Output Capacitane *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% 2005. 1. 17 Revision No : 0 1/3 PZTA44 h FE - I C 200 10 COMMON EMITTER VCE =10V 180 160 V CC =150V I C /I B =10 Ta=25 C V BE (OFF)=4V 5 3 140 TIME t (µS) DC CURRENT GAIN h FE TURN-ON SWITCHING CHARACTERISTICS 120 100 80 60 1 0.5 0.3 40 tr 20 1 10 100 3 30 10 100 TURN-OFF SWITCHING CHARACTERISTICS C ib , C ob - V CB CAPACITANCE C ib (pF), Cob (pF) VCC =150V I C /I B =10 Ta=25 C 10 5 3 ts 1 0.5 0.3 tf 0.1 1k Ta=25 C f=1MHz 500 300 100 C ib 50 30 C ob 10 5 3 1 1 3 10 30 10 100 1k COLLECTOR-BASE VOLTAGE VCB (V) V BE(sat) , V CE(sat) - I C COLLECTOR SATURATION REGION @I C /I B =10 VBE(sat) 0.8 0.6 VBE(on) @VCE =10V 0.4 V CE(sat) @I C /IB =10 0 0.1 1 COLLECTOR CURRENT I C (mA) Ta=25 C 0.2 0.1 100 1 10 100 COLLECTOR CURRENT I C (mA) Revision No : 0 1k COLLECTOR EMITTER VOLTAGE VCE (V) 1.0 SATURATION VOLTAGE V BE(sat) , V CE(sat) (V) 1 COLLECTOR CURRENT I C (mA) 50 30 TIME t (µS) 10k 1k COLLECTOR CURRENT I C (A) 100 2005. 1. 17 td 0.1 0 0.5 Ta=25 C 0.4 I C =1mA I C =10mA I C =50mA 0.3 0.2 0.1 0 10 100 1k 10k 100k BASE CURRENT I B (µA) 2/3 PZTA44 SMALL SIGNAL CURRENT GAIN h FE h FE - I C 100 VCE =10V f=10MHz Ta=25 C 30 10 3 1 0.3 0.1 0.1 1 10 100 1k COLLECTOR CURRENT I C (mA) 2005. 1. 17 Revision No : 0 3/3