KEC TIP33C

SEMICONDUCTOR
TIP33C
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
Q
B
K
F
A
I
FEATURES
C
E
ᴌComplementary to TIP34C.
ᴌRecommended for 45Wᴕ50W Audio Frequency
G
J
H
Amplifier Output Stage.
L
D
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
d
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
10
A
Base Current
IB
3
A
PC
80
W
Tj
150
ᴱ
Tstg
-55ᴕ150
ᴱ
Collector Power Dissipation
(Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
P
1
P
2
T
M
3
DIM
A
B
C
D
d
E
F
G
H
I
J
K
L
M
P
Q
T
MILLIMETERS
15.9 MAX
4.8 MAX
_ 0.3
20.0 +
_ 0.3
2.0 +
1.0+0.3/-0.25
2.0
1.0
3.3 MAX
9.0
4.5
2.0
1.8 MAX
_ 0.5
20.5 +
2.8
_ 0.2
5.45 +
_ 0.2
Φ3.2 +
0.6+0.3/-0.1
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=100V, IE=0
-
-
10
Ọ
A
Emitter Cut-off Current
IEBO
VEB=6V, IC=0
-
-
10
Ọ
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=25mA, IB=0
100
-
-
V
DC Current Gain
hFE (Note)
VCE=4V, IC=2A
55
-
160
VCE(sat)
IC=4A, IB=0.4A
-
-
1.0
V
VCE=12V, IC=0.5A
-
20
-
MHz
VCB=10V, IE=0, f=1MHz
-
150
-
pF
Collector-Emitter Saturation Voltage
fT
Transition Frequency
Cob
Collector Output Capacitance
Note : hFE Classification R:55~110,
2001. 1. 10
O:80~160
Revision No : 1
1/2
TIP33C
1
r th - t w
TRANSITION THERMAL RESISTANCE
r th ( C/W)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
VCE(sat) - I C
COMMON EMITTER
I C /C B =10
0.5
0.3
0.1
0.05
0.03
0.01
0.001
0.1
0.01
1
10
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SIGLE NONREPETITIVE PULSE)
5
3
INK
EAT S
NO H
1
0.5
0.3
0.1
10
1
3
BASE CURRENT I C (A)
30
CUT-OFF FREQUENCY f T (MHz)
VCE =4V
DC CURRENT GAIN h FE
500
300
Tc=125 C
Tc=25 C
Tc=-30 C
50
30
0.01
1
0.1
10
C
25
=1 C
c
T
5
=2
C
Tc -30
=
Tc
20
10
0
-0.01
-3
-10
COLLECTOR CURRENT I C (A)
0
100
125
AMBIENT TEMPERATURE Ta ( C)
150
I C MAX
(CONTINUOUS)
-5
-3
10
mS
*
OP
Tc ER
A
=2 T
5
I
C ON
DC
S*
0µ
20
-10
30
MAXIMUM POWER DISSIPATION PC (W)
-1
*
mS
1.0
40
75
-0.3
I C MAX.(PULSED)*
60
50
-0.1
-30
INFINITE HEAT SINK
25
-0.03
SAFE OPERATING AREA
Tc=Ta
0
2K
EMITTER CURRENT I E (A)
Pc - Ta
80
1K
VCE =-12V
COLLECTOR CURRENT I C (A)
100
300
fT - I E
1K
10
0.001
100
PULSE WIDTH t w (sec)
h FE - I C
100
30
10
-1
-0.5
-0.3
* SINGLE NONREPETITIVE
PLUSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-0.1
-0.05
-0.03
-1
-3
-10
-30
-100
-200
COLLECTOR-EMITTER VOLTAGE V CE (V)
2001. 1. 10
Revision No : 1
2/2