SEMICONDUCTOR TIP33C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. Q B K F A I FEATURES C E ᴌComplementary to TIP34C. ᴌRecommended for 45Wᴕ50W Audio Frequency G J H Amplifier Output Stage. L D MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC d SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6 V Collector Current IC 10 A Base Current IB 3 A PC 80 W Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range P 1 P 2 T M 3 DIM A B C D d E F G H I J K L M P Q T MILLIMETERS 15.9 MAX 4.8 MAX _ 0.3 20.0 + _ 0.3 2.0 + 1.0+0.3/-0.25 2.0 1.0 3.3 MAX 9.0 4.5 2.0 1.8 MAX _ 0.5 20.5 + 2.8 _ 0.2 5.45 + _ 0.2 Φ3.2 + 0.6+0.3/-0.1 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-3P(N) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=100V, IE=0 - - 10 Ọ A Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 10 Ọ A Collector-Emitter Breakdown Voltage V(BR)CEO IC=25mA, IB=0 100 - - V DC Current Gain hFE (Note) VCE=4V, IC=2A 55 - 160 VCE(sat) IC=4A, IB=0.4A - - 1.0 V VCE=12V, IC=0.5A - 20 - MHz VCB=10V, IE=0, f=1MHz - 150 - pF Collector-Emitter Saturation Voltage fT Transition Frequency Cob Collector Output Capacitance Note : hFE Classification R:55~110, 2001. 1. 10 O:80~160 Revision No : 1 1/2 TIP33C 1 r th - t w TRANSITION THERMAL RESISTANCE r th ( C/W) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C COMMON EMITTER I C /C B =10 0.5 0.3 0.1 0.05 0.03 0.01 0.001 0.1 0.01 1 10 CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SIGLE NONREPETITIVE PULSE) 5 3 INK EAT S NO H 1 0.5 0.3 0.1 10 1 3 BASE CURRENT I C (A) 30 CUT-OFF FREQUENCY f T (MHz) VCE =4V DC CURRENT GAIN h FE 500 300 Tc=125 C Tc=25 C Tc=-30 C 50 30 0.01 1 0.1 10 C 25 =1 C c T 5 =2 C Tc -30 = Tc 20 10 0 -0.01 -3 -10 COLLECTOR CURRENT I C (A) 0 100 125 AMBIENT TEMPERATURE Ta ( C) 150 I C MAX (CONTINUOUS) -5 -3 10 mS * OP Tc ER A =2 T 5 I C ON DC S* 0µ 20 -10 30 MAXIMUM POWER DISSIPATION PC (W) -1 * mS 1.0 40 75 -0.3 I C MAX.(PULSED)* 60 50 -0.1 -30 INFINITE HEAT SINK 25 -0.03 SAFE OPERATING AREA Tc=Ta 0 2K EMITTER CURRENT I E (A) Pc - Ta 80 1K VCE =-12V COLLECTOR CURRENT I C (A) 100 300 fT - I E 1K 10 0.001 100 PULSE WIDTH t w (sec) h FE - I C 100 30 10 -1 -0.5 -0.3 * SINGLE NONREPETITIVE PLUSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.1 -0.05 -0.03 -1 -3 -10 -30 -100 -200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 1. 10 Revision No : 1 2/2