SEMICONDUCTOR KTD2092 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. A P S High hFE : hFE=500 1500 (IC=0.5A). B E K G Low Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A). L ) R M SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7 V IC 3 DC Collector Current N Base Current Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range ICP 5 IB 1 N 2 1 A Pulse D H 3 S 0.5 Typ 1. BASE Q CHARACTERISTIC D M N P Q R G H J K L J MAXIMUM RATING (Ta=25 L MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F FEATURES C 2. COLLECTOR 3. EMITTER A 2 TO-220IS PC W 25 Tj 150 Tstg -55 150 EQUIVALENT CIRCUIT COLLECTOR BASE EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=80V, IE=0 - - 10 A Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 10 A V(BR)CEO IC=50mA, IB=0 80 - - V hFE(1) VCE=1V, IC=0.5A 500 - 1500 hFE(2) VCE=1V, IC=1A 150 - - Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.01A - - 0.35 V Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.01A - - 1.2 V IE=3A, IB=0 - - 2.5 V VCE=5V, IC=1A - 140 - MHz VCE=10V, IE=0, f=1MHz - 30 - pF - 0.5 - - 5.0 - - 0.7 - Collector-Emitter Breakdown Voltage DC Current Gain VECF fT Transition Frequency Collector Output Capacitance Turn-on Time Cob OUTPUT ton 20µsec INPUT Switching Time Storage Time Tstg IB1 0 Fall Time tf IB2 IB1=-I B2 =10mA DUTY CYCLE < 1% 2007. 5. 22 Revision No : 3 I B1 30Ω Collector-Emitter Forward Voltage I B2 VCC =30V S 1/2 KTD2092 4 2.4 2.0 2 1.6 1.4 1.2 1 0.8 0.5 0.4 3k COMMON EMITTER Ta=25 C DC CURRENT GAIN h FE 10 20 2.8 h FE - I C 0 0 0 2 4 6 8 10 12 14 500 300 V CE =2V VCE =1V 0.1 0.3 3 1 COLLECTOR CURRENT I C (A) h FE - I C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) Tc=100 C 1k V CE =1V Tc=25 C Tc=-55 C 500 300 VCE =2V VCE =5V VCE =1V 100 50 0.05 0.1 0.3 3 1 10 5 3 COMMON EMITTER I C /I B =100 1 0.5 0.3 0 10 C Tc=25 C Tc=-55 C = Tc 0.1 0.05 0.02 0.05 0.1 0.3 3 1 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) r th - t w SAFE OPERATING AREA 10 PULSE WIDTH t w (S) 100 1k I C MAX. (CONTINUOUS) 1 0.5 0.3 SINGLE NONREPETIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.1 0.05 S 0µ 1 10 (2) 1 I C MAX.(PULSED) 5 3 S S 1m 0m N 10 IO AT mS ER 5 C OPc=2 DC T 10 0.1 10 10 10 (1) 0.01 5 20 CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. COMMON EMITTER(SINGLE NONREPETITIVE PULSE) (1) NO HEAT SINK (2) INFINITE HEAT SINK (Tc=25 C) 0.1 0.001 10 5 VCEO MAX. DC CURRENT GAIN h FE VCE =5V COLLECTOR-EMITTER VOLTAGE VCE (V) COMMON EMITTER TRANSIENT THERMAL RESISTANCE r th ( C/W) 1k 50 0.05 16 3k 100 COMMON EMITTER Tc=25 C 100 IB =0.2mA COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) I C - VCE 0.02 1 3 10 30 100 200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2007. 5. 22 Revision No : 3 2/2