KEXIN 2SA1461

Transistors
IC
SMD Type
PNP Silicon Epitaxia
2SA1461
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
High gain bandwidth product: fT=510MHz.
0.55
High speed switching: tstg=110ns.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
IC
-200
mA
PT
200
mW
Collector current
Maximum Total power dissipation
at 25
ambient temperature
Maximum Junction temperature
Tj
150
Maximum Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = -30V, IE=0
Emitter cutoff current
IEBO
VEB = -3V, IC=0
DC current gain *
hFE
Min
Typ
VCE = -1V , IC = -10mA
75
180
VCE = -1V , IC = -100mA
25
100
Max
Unit
-100
nA
-100
nA
300
Collector-emitter saturation voltage *
VCE(sat) IC = -50mA , IB = -5mA
-0.1
-0.4
V
Base-emitter saturation voltage *
VBE(sat) IC = -50mA , IB = -5mA
-0.8
-0.95
V
Gain bandwidth product
fT
VCE = -20V , IE = 10mA
Output capacitance
Cob
VCB = -5V , IE = 0 , f = 1.0MHz
Turn-on time
ton
VCC = -3V ,
Storage time
tstg
IC = -10mA ,
Turn-off time
toff
IB1 = -IB2 = -1mA
*. PW
200
510
2.5
110
MHz
4.5
pF
70
ns
225
ns
300
ns
350ìs,duty cycle 2%
hFE Classification
Marking
Y22
hFE
75 150
Y23
100
200
Y24
150
300
www.kexin.com.cn
1