Transistors IC SMD Type PNP Silicon Epitaxia 2SA1461 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High gain bandwidth product: fT=510MHz. 0.55 High speed switching: tstg=110ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V IC -200 mA PT 200 mW Collector current Maximum Total power dissipation at 25 ambient temperature Maximum Junction temperature Tj 150 Maximum Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = -30V, IE=0 Emitter cutoff current IEBO VEB = -3V, IC=0 DC current gain * hFE Min Typ VCE = -1V , IC = -10mA 75 180 VCE = -1V , IC = -100mA 25 100 Max Unit -100 nA -100 nA 300 Collector-emitter saturation voltage * VCE(sat) IC = -50mA , IB = -5mA -0.1 -0.4 V Base-emitter saturation voltage * VBE(sat) IC = -50mA , IB = -5mA -0.8 -0.95 V Gain bandwidth product fT VCE = -20V , IE = 10mA Output capacitance Cob VCB = -5V , IE = 0 , f = 1.0MHz Turn-on time ton VCC = -3V , Storage time tstg IC = -10mA , Turn-off time toff IB1 = -IB2 = -1mA *. PW 200 510 2.5 110 MHz 4.5 pF 70 ns 225 ns 300 ns 350ìs,duty cycle 2% hFE Classification Marking Y22 hFE 75 150 Y23 100 200 Y24 150 300 www.kexin.com.cn 1