KEXIN 2SC4177

Transistors
IC
SMD Type
NPN Silicon Epitaxia
2SC4177
Features
High dc current gain
High voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 60V, IE=0
Testconditons
Min
0.1
ìA
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
0.1
ìA
hFE
VCE = 6V , IC = 1.0mA
200
600
Collector-emitter saturation voltage *
VCE(sat) IC = 100mA, IB = 10mA
0.15
0.3
V
Base-emitter saturation voltage *
VBE(sat) IC = 100mA, IB = 10mA
0.86
1.0
V
0.62
0.65
DC current gain *
Base emitter voltage *
Gain bandwidth product
Output capacitance
*. PW
90
Typ
VBE
VCE = 6V, IC = 1.0mA
fT
VCE = 6V, IE = -10mA
250
MHz
VCE = 6V, IE = 0, f = 1MHz
3.0
pF
Cob
0.55
V
350ìs,duty cycle 2%
hFE Classification
Marking
L4
hFE
90 180
L5
135
270
L6
200
400
L7
300
600
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