Transistors IC SMD Type NPN Silicon Epitaxia 2SD2230 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low VCE(sat). 1 0.55 High hFE and high current. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 16 V Collector-emitter voltage VCEO 16 V Emitter-base voltage VEBO 5 V Collector current(dc) ID 500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain * Base to emitter voltage * Collector saturation voltage Output capacitance * Pulsed: PW Typ VCB = 16 V, IE = 0 VEB = 6.0 V, IC = 0 VCE = 1.0 V, IC = 100 mA 200 hFE 2 VCE = 1.0 V, IC = 500 mA 200 VBE VCE = 1.0 V, IC = 10 mA 550 Max Unit 100 nA 100 nA 700 mV VCE(sat) 1 IC = 100 mA, IB = 10 mA 33 50 mV VCE(sat) 2 IC = 500 mA, IB = 20 mA 150 200 mV 15 pF fT 350 µs, duty cycle Min hFE 1 Cob Gain bandwidth product Testconditons VCB = 10 V, IE = 0 , f = 1.0 MHz VCE = 1.0 V, IE = -100 mA 50 MHz 2% Marking Marking D46 www.kexin.com.cn 1