Transistors SMD Type NPN Silicon Epitaxia 2SD2402 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Collector current IC 5 A Collector current (pulse) * ICP 8 A Base current IB 0.2 A Base current (pulse) * IBP 0.4 A Total power dissipation PT 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * PW 10 ms, duty cycle 50 % www.kexin.com.cn 1 Transistors SMD Type 2SD2402 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = 50 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 100 nA DC current gain * Base to emitter voltage * hFE 1 VCE = 1.0 V, IC =1.0 A 80 hFE 2 VCE = 1.0 V, IC = 2.0 A 100 200 400 VBE VCE = 1.0 V, IC = 0.1 A 600 650 700 mV 140 300 mV VCE(sat) 2 IC = 5 V, IB = 0.25 A 230 500 mV VBE(sat) IC = 3 V, IB = 0.15 A 0.88 1.2 V VCE(sat) 1 IC = 3 V, IB = 0.15 A Collector saturation voltage Base saturation voltage Gain bandwidth product fT Output capacitance Cob Turn-on time ton Storage time tstg Fall time VCE = 10 V, IE = -0.5 A tf 170 MHz VCB = 10 V, IE = 0 , f = 1.0 MHz 60 pF IC = 2.0 A, VCC= 10 V IB1 = -IB2 = 0.1 A RL = 500Ù 275 ns 485 ns 45 ns hFE Classification 2 Min Marking EX EY EZ hFE 100 200 160 320 200 400 www.kexin.com.cn