Transistors IC SMD Type NPN Silicon Epitaxia 2SD2228 Features High dc current. Low collector saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 16 V Emitter-base voltage VEBO 6 V Collector current Ic 500 mA mW Total power dissipation PT 150 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 16 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 100 nA hFE VCE = 1.0 V, IC = 100 mA DC current gain * Collector saturation voltage * 600 45 100 mV VCE(sat) 2 IC = 500 mA, IB = 20 mA 200 300 mV 650 700 VBE fT Cob 350 ìs, duty cycle 100 Typ 200 Base to emitter voltage * * Pulsed: PW Min VCE(sat) 1 IC = 100 mA, IB = 10 mA Gain bandwidth product Output capacitance Testconditons VCE = 1.0 V, IC = 10 mA 600 VCE = 3.0 V, IE = -100 mA 50 VCB = 10 V, IE = 0 , f = 1.0 MHz mV MHz 15 pF 2% hFE Classification Marking D42 D43 D44 D45 hFE 110 240 190 320 270 400 350 600 www.kexin.com.cn 1