KEXIN 2SD2228

Transistors
IC
SMD Type
NPN Silicon Epitaxia
2SD2228
Features
High dc current.
Low collector saturation voltage.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
16
V
Emitter-base voltage
VEBO
6
V
Collector current
Ic
500
mA
mW
Total power dissipation
PT
150
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 16 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 6.0 V, IC = 0
100
nA
hFE
VCE = 1.0 V, IC = 100 mA
DC current gain *
Collector saturation voltage *
600
45
100
mV
VCE(sat) 2 IC = 500 mA, IB = 20 mA
200
300
mV
650
700
VBE
fT
Cob
350 ìs, duty cycle
100
Typ
200
Base to emitter voltage *
* Pulsed: PW
Min
VCE(sat) 1 IC = 100 mA, IB = 10 mA
Gain bandwidth product
Output capacitance
Testconditons
VCE = 1.0 V, IC = 10 mA
600
VCE = 3.0 V, IE = -100 mA
50
VCB = 10 V, IE = 0 , f = 1.0 MHz
mV
MHz
15
pF
2%
hFE Classification
Marking
D42
D43
D44
D45
hFE
110 240
190 320
270 400
350 600
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