Transistors IC SMD Type NPN Silicon Epitaxia 2SD780 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA). 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5.0 V Collector current IC 300 mA Total power dissipation at 25 ambient temperature PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 50 V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 100 nA DC current gain * hFE VCE = 1.0 V, IC = 50 mA 110 200 400 Base to emitter voltage * VBE VCE = 6.0 V, IC = 10 mA 600 645 700 mV 0.15 0.6 V Collector saturation voltage * Cob Gain bandwidth product 350 ìs, duty cycle Min VCE(sat) IC = 300 mA, IB = 30 mA Output capacitance * Pulsed: PW Testconditons fT Typ VCB = 6.0 V, IE = 0 , f = 1.0 MHz 7.0 pF VCE = 6.0 V, IE = -10 mA 140 MHz 2% hFE Classification Marking DW1 DW2 DW3 DW4 DW5 hFE 110 180 135 220 170 270 200 320 250 400 www.kexin.com.cn 1