Transistors IC SMD Type Silicon PNP Epitaxial Type 2SA2058 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High DC current gain: hFE = 200 to 500 (IC = ?0.2 A) 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-emitter saturation voltage: VCE (sat) = ?0.19 V (max) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High-speed switching: tf = 25 ns (typ.) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -7 V Collector current (DC) IC -1.5 A Collector current (Pulse) Icp -2.5 A Base current IB -150 mA Collector power dissipation DC PC 500 mW Collector power dissipation t=10s * PC 750 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 2 * Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:645 mm ) www.kexin.com.cn 1 Transistors IC SMD Type 2SA2058 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current Collector-to-emitter breakdown voltage IcBO VCB = -20V , IE = 0 IEBO VEB = -7V , IC = 0 V(BR)CEO IC =-10mA , IB = 0 hFE DC current Gain Testconditons Typ Max Unit -100 nA -100 nA -10 VCE = -2V , IC = -0.2A 200 VCE = -2V , IC = -0.6A 125 V 500 Collector-emitter saturation voltage VCE(sat) IC = -0.6A , IB = -20mA -019 V Base-emitter saturation voltage VBE(sat) IC = -0.6A , IB = -20mA -1.10 V Collector output capacitance Cob Switching time Rise time ton Switching time Storage time Switching time Fall time tstg VCB = -10V , IE = 0, f = 1MHz VCC=-6V.,RL=10Ù, -IB1=IB2=-20mA see Figure 1 tf Figure 1: Switching Time Test Circuit & Timing Chart Marking Marking 2 Min WM www.kexin.com.cn 12 pF 50 ns 115 ns 25 ns