KEXIN 2SA2058

Transistors
IC
SMD Type
Silicon PNP Epitaxial Type
2SA2058
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
High DC current gain: hFE = 200 to 500 (IC = ?0.2 A)
1
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Low collector-emitter saturation voltage: VCE (sat) = ?0.19 V (max)
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
High-speed switching: tf = 25 ns (typ.)
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-20
V
Collector-emitter voltage
VCEO
-10
V
Emitter-base voltage
VEBO
-7
V
Collector current (DC)
IC
-1.5
A
Collector current (Pulse)
Icp
-2.5
A
Base current
IB
-150
mA
Collector power dissipation DC
PC
500
mW
Collector power dissipation t=10s *
PC
750
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
2
* Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:645 mm )
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1
Transistors
IC
SMD Type
2SA2058
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector-to-emitter breakdown voltage
IcBO
VCB = -20V , IE = 0
IEBO
VEB = -7V , IC = 0
V(BR)CEO IC =-10mA , IB = 0
hFE
DC current Gain
Testconditons
Typ
Max
Unit
-100
nA
-100
nA
-10
VCE = -2V , IC = -0.2A
200
VCE = -2V , IC = -0.6A
125
V
500
Collector-emitter saturation voltage
VCE(sat) IC = -0.6A , IB = -20mA
-019
V
Base-emitter saturation voltage
VBE(sat) IC = -0.6A , IB = -20mA
-1.10
V
Collector output capacitance
Cob
Switching time Rise time
ton
Switching time Storage time
Switching time Fall time
tstg
VCB = -10V , IE = 0, f = 1MHz
VCC=-6V.,RL=10Ù, -IB1=IB2=-20mA
see Figure 1
tf
Figure 1: Switching Time Test Circuit & Timing Chart
Marking
Marking
2
Min
WM
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12
pF
50
ns
115
ns
25
ns