Transistors SMD Type High-Current Switching Applications 2SB1201 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Fast switching speed. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Collector current (pulse) ICP -4 A Collector dissipation PC 0.8 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SB1201 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = -50V , IE = 0 -100 nA Emitter cutoff current IEBO VEB = -4V , IC = 0 -100 nA DC current Gain hFE Gain bandwidth product fT Output capacitance Cob VCE = -2V , IC = -100mA 100 VCE = -2V , IC = -1.5A 40 560 VCE = -10V , IC = -50mA 150 MHz VCB = -10V , f = 1MHz 22 pF Collector-emitter saturation voltage VCE(sat) IC = -1A , IB = -50mA -0.3 -0.7 V Base-to-emitter saturation voltage VBE(sat) IC = -1A , IB = -50mA -0.9 -1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -50 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -6 V Turn-on time ton 60 ns Storage time tstg 450 ns tf 30 ns Fall time hFE Classification Rank hFE 2 Min R 100 S 200 www.kexin.com.cn 140 T 280 200 U 400 280 560