KEXIN 2SB1201

Transistors
SMD Type
High-Current Switching Applications
2SB1201
TO-252
Features
6.50
+0.2
5.30-0.2
Low collector-to-emitter saturation voltage.
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
+0.15
4.60-0.15
3 .8 0
+0.15
5.55 -0.15
+0.25
2.65 -0.1
0.127
max
+0.28
1.50 -0.1
+0.1
0.80-0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Fast switching speed.
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-2
A
Collector current (pulse)
ICP
-4
A
Collector dissipation
PC
0.8
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SB1201
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -50V , IE = 0
-100
nA
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
-100
nA
DC current Gain
hFE
Gain bandwidth product
fT
Output capacitance
Cob
VCE = -2V , IC = -100mA
100
VCE = -2V , IC = -1.5A
40
560
VCE = -10V , IC = -50mA
150
MHz
VCB = -10V , f = 1MHz
22
pF
Collector-emitter saturation voltage
VCE(sat) IC = -1A , IB = -50mA
-0.3
-0.7
V
Base-to-emitter saturation voltage
VBE(sat) IC = -1A , IB = -50mA
-0.9
-1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-60
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-50
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-6
V
Turn-on time
ton
60
ns
Storage time
tstg
450
ns
tf
30
ns
Fall time
hFE Classification
Rank
hFE
2
Min
R
100
S
200
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140
T
280
200
U
400
280
560