Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1685 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Collector current (pulse) ICP -300 mA Base current IB -30 mA Collector dissipation PC 150 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SA1685 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = -30V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -4V , IC = 0 -0.1 ìA DC current Gain hFE VCE = -1V , IC = -10mA fT VCE = -10V , IC = -10mA 400 MHz VCB = -10V , f = 1MHz 2.9 pF Gain bandwidth product Common base output capacitance Cob Min Typ 60 270 Collector-to-emitter saturation voltage VCE(sat) IC = -10mA , IB =-1mA -0.07 -0.2 V Base-to-emitter saturation voltage VBE(sat) IC = -10mA , IB =-1mA -0.75 -1 V V(BR)CBO IC = -10ìA , IE = 0 -40 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -20 V Emitter-to-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V Collector-to-base breakdown voltage Delay time td 14 20 ns Rise time tr 11 20 ns Storage time ts 80 180 ns Fall time tf 16 25 ns hFE Classification YL Marking 2 Testconditons Rank 3 4 hFE 60 120 90 180 www.kexin.com.cn