Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1607 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High gain-bandwidth product. 0.4 3 Fast switching speed. 1 0.55 Low saturation voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Collector current (pulse) ICP -300 mA Base current IB -30 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SA1607 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -30V, IE=0 -0.1 ìA Emitter cutoff current IEBO VEB = -4V, IC=0 -0.1 ìA DC current gain hFE VCE = -1V , IC = -10mA fT VCE = -10V , IC = -10mA 400 MHz Cob VCB = -10V , f = 1.0MHz 2.9 pF Gain bandwidth product Output capacitance Min Typ 60 180 Collector-emitter saturation voltage VCE(sat) IC = -10mA , IB = -1mA -0.07 -0.2 V Base-emitter saturation voltage VBE(sat) IC = -10mA , IB = -1mA -0.75 -1 V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -20 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V Delay time td 14 20 ns Rise time tr 11 20 ns tstg 80 180 ns tf 16 25 ns Storage time Fall time hFE Classification YL Marking Rank hFE 2 Testconditons 3 60 120 www.kexin.com.cn 4 90 180