Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1331 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High breakdown voltage. 1 0.55 Fast switching speed. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Collector current (pulse) ICP -400 mA Base current IB -40 mA Collector dissipation PC 150 mW Jumction temperature Tj 125 Storage temperature Tstg -55 to +125 www.kexin.com.cn 1 Transistors IC SMD Type 2SA1331 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = -40V , IE = 0 -0.1 ìA Emitter cutoff current IEBO VEB = -4V , IC = 0 -0.1 ìA DC current Gain hFE VCE = -6V , IC = -1mA fT VCE = -6V , IC = -1mA 100 MHz Cob VCB = -6V , f = 1MHz 3.5 pF Gain bandwidth product Common base output capacitance Testconditons Typ 90 400 Collector-to-emitter saturation voltage VCE(sat) IC = -10mA , IB =-1mA -0.1 -0.4 V Base-to-emitter saturation voltage VBE(sat) IC = -10mA , IB =-1mA -0.75 -1.1 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -60 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -50 V IE = -10ìA , IC = 0 -5 V Emitter-to-base breakdown voltage V(BR)EBO Delay time td Rise time tr Storage time tstg Fall time tf hFE Classification O Marking Rank hFE 2 Min 4 90 180 www.kexin.com.cn 5 6 135 270 200 400 40 ns 120 ns 190 ns 200 ns