KEXIN 2SA1331

Transistors
IC
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SA1331
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
High breakdown voltage.
1
0.55
Fast switching speed.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-150
mA
Collector current (pulse)
ICP
-400
mA
Base current
IB
-40
mA
Collector dissipation
PC
150
mW
Jumction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
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1
Transistors
IC
SMD Type
2SA1331
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
IcBO
VCB = -40V , IE = 0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
-0.1
ìA
DC current Gain
hFE
VCE = -6V , IC = -1mA
fT
VCE = -6V , IC = -1mA
100
MHz
Cob
VCB = -6V , f = 1MHz
3.5
pF
Gain bandwidth product
Common base output capacitance
Testconditons
Typ
90
400
Collector-to-emitter saturation voltage
VCE(sat) IC = -10mA , IB =-1mA
-0.1
-0.4
V
Base-to-emitter saturation voltage
VBE(sat) IC = -10mA , IB =-1mA
-0.75
-1.1
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-60
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-50
V
IE = -10ìA , IC = 0
-5
V
Emitter-to-base breakdown voltage
V(BR)EBO
Delay time
td
Rise time
tr
Storage time
tstg
Fall time
tf
hFE Classification
O
Marking
Rank
hFE
2
Min
4
90
180
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5
6
135 270
200 400
40
ns
120
ns
190
ns
200
ns