Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SC1653 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High voltage VCEO : 130V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 150 V Collector-emitter voltage VCEO 130 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA power dissipation PD 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 130V, IE=0 Testconditons Min Typ 0.1 A Emitter cutoff current IEBO VEB = 5V, IC=0 0.1 A DC current gain * hFE VCE =3V , IC = 15mA 90 200 VCE =3V , IC = 1mA 70 180 400 Collector-emitter saturation voltage * VCE(sat) IC = 50mA , IB = 5mA 0.1 0.3 Base-emitter saturation voltage * VBE(sat) IC = 50mA , IB = 5mA 0.73 1.0 Output capacitance Cob Transiston frequency * Pulse test: tp fT 350 ìs; d V V VCB = 10V , IE = 0 , f = 1.0MHz 2.3 pF VCE = 10V , IE = -10mA 120 MHz 0.02. hFE Classification Marking hFE N2 90 180 N3 135 270 N4 200 400 www.kexin.com.cn 1 Transistors IC SMD Type 2SC1653 Typical Characteristics Fig.1 Total Power Dissipation vs. Ambient Temperature Fig.2 Collector Current vs. Collector to Emitter Voltage Fig.3 Collector Current vs. Base to Emitter Voltage Fig.4 Collector Current vs. Collector to Emitter Voltage Fig.5 DC Current Gain vs. Collector Current 2 www.kexin.com.cn Transistors IC SMD Type 2SC1653 Fig.6 Base And Collector Saturation Voltage vs. Collector Current Fig.7 Gain Bandwidth Product vs. Emitter Current Fig.8 Input And Output Capacitance vs. Reverse Voltage www.kexin.com.cn 3