KEXIN 2SC3360

Transistors
SMD Type
NPN Silicon Epitaxial Transistor
2SC3360
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
High voltage VCEO=200V
+0.1
1.3-0.1
+0.1
2.4-0.1
High DC current gain.hFE=90 to 450
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
200
V
Collector-emitter voltage
VCEO
200
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = 200V, IE=0
Emitter cutoff current
IEBO
VEB = 5V, IC=0
DC current gain *
hFE
Min
Typ
VCE =10V , IC = 10mA
90
200
VCE =10V , IC = 50mA
50
200
VCE =10V , IC = 10mA
0.6
Max
Unit
100
nA
100
nA
450
0.64
0.7
V
Collector-emitter saturation voltage *
VCE(sat) IC = 50mA , IB = 5mA
0.1
0.3
V
Base saturation voltage *
VBE(sat) IC = 50mA , IB = 5mA
0.8
1.2
V
Base-emitter voltage *
VBE
VCE = 10V , IE = -10mA
160
MHz
Output capacitance
Cob
VCB = 30V , IE = 0 , f = 1.0MHz
2.8
pF
Turn-on time
ton
IC = 10mA, IB1 = -IB2 = 1mA,
0.15
ìs
Storage time
tstg
VCC = 10 V
1.3
ìs
VBE(off) = -2.5V
0.3
ìs
Gain bandwidth product
fT
Fall time
* Pulse test: tp
tf
350 ìs; d
0.02.
hFE Classification
Marking
N15
N16
N17
hFE
90 180
135 270
200 450
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