KEXIN 2SA812

Transistors
SMD Type
PNP Silicon Epitaxial Transistor
2SA812
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)
0.4
3
1
0.55
High Voltage: VCEO = -50 V
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
-60
V
Collector to emitter voltage
VCEO
-50
V
Emitter to base voltage
VEBO
-5.0
V
Collector current (DC)
IC
-100
mA
power dissipation
PC
200
mW
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = -60 V, IE = 0 A
Emitter cutoff current
IEBO
VEB = -5.0 V, IC = 0 A
DC current gain *
hFE
VCE = -6.0 V, IC = -1.0 mA
Min
90
VCE(sat) IC = -100 mA, IB = -10 mA
Collector saturation voltage
Max
Unit
-0.1
A
-0.1
A
200
600
-0.18
-0.3
-0.62
-0.68
V
Base to emitter voltage
VBE
VCE = 6.0 V, IC = -1.0 mA
Output capacitance
Cob
VCE = -10 V, IE = 0 A, f = 1.0 MHz
4.5
pF
Transition frequency
fT
VCE = -6.0 V, IE = 10 mA
180
MHz
* Pulsed: PW
350
s, Duty Cycle
-0.58
Typ
V
2%
hFE Classification
Marking
hFE
M4
90
180
M5
135
270
M6
200
400
M7
300
600
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1
Transistors
SMD Type
2SA812
Typical Characteristics
Fig.1 Total Power Dissipation vs.
Ambient Temperature
Fig.3 Collector Current vs. Collector to
Emitter Voltage
Fig.5 Base and Collector Saturation Voltage vs.
Collector Current
2
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Fig.2 Collector Current vs. Base to
Emitter Voltage
Fig.4 Collector Current vs. Collector to
Emiiter Voltage
Fig.6 DC Current Gain vs. Collector Current