Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA1330 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain. 0.4 3 1 0.55 High voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -200 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SA1330 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -200V, IE=0 -100 nA Emitter cutoff current IEBO VEB = -5V, IC=0 -100 nA DC current gain * hFE Base-emitter voltage * VBE Min Typ VCE = -10V , IC = -10mA 90 200 VCE = -10V , IC = -50mA 50 195 450 VCE = -10V , IC = -10mA -0.6 -0.65 -0.7 V Collector-emitter saturation voltage * VCE(sat) IC = -50mA , IB = -5mA -0.21 -0.3 V Base saturation voltage * VBE(sat) IC = -50mA , IB = -5mA -0.8 -1.2 V VCE = -10V , IE = 10mA 120 MHz Gain bandwidth product fT Output capacitance Cob VCB = -30V , IE = 0 , f = 1.0MHz 3.6 pF Turn-on time ton IC = -10mA, IB1 = -IB2 = -1mA, 0.16 ìs Storage time tstg VCC = -10 V 1.3 ìs VBE(off) = 2.5V 0.18 ìs Fall time * Pulse test: tp tf 350 ìs; d 0.02. hFE Classification 2 Testconditons Marking O5 O6 O7 hFE 90 180 135 270 200 450 www.kexin.com.cn