Transistors SMD Type Silicon NPN Triple Diffused Type 2SC3138 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 VCEO = 200 V (max) 0.55 High voltage. VCBO = 200 V (max) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Small flat package. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 ìA Collector-base breakdown voltage V(BR)CBO IC = 0.1 mA, IE = 0 200 Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 200 DC current gain hFE VCE = 3 V, IC = 10 mA Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA Base-emitter saturation voltage VBE (sat) IC = 10 mA, IB = 1 mA Transition frequency fT Collector output capacitance VCE = 10 V, IC = 2 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Turn-on time ton pulse width = 5ìs,duty cycle 2 Storage time tstg IB1=-IB2=0.6 mA Fall time tf VCC=50V,IC=6mA V V 70 50 240 0.1 0.5 0.75 1.5 100 2 V V MHz 4 pF 0.3 ìs 2 ìs 0.4 ìs hFE Classification Marking NO NY Rank O Y hFE 70 140 120 240 www.kexin.com.cn 1