Transistors SMD Type NPN Silicon Triple Diffused 2SC3233 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 High colletor Breakdown Voltage: VCEO=400V +0.15 0.50 -0.15 +0.2 9.70 -0.2 tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.8A 3 .8 0 Excellent Switching Times 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Collector current IC 2 A Base Current IB 0.5 A 1 W 20 W Total Power dissipation Ta = 25 PC TC = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit collector cutoff current ICBO VCB=400V,IE=0 emitter cutoff current IEBO VEB=7V,IC=0 Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA,IC=0 500 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA,IB=0 400 V VCE=5V,IC=0.1A 20 VCE=5V,IC=1A 8 DC current Gain hFE 100 ìA 1 mA Collector-Emitter Saturation Voltage VCE(sat) IC=0.1A,IB=0.2A 1 V Base- Emitter Voltage VBE(sat) IC=0.1A,IB=0.2A 1.5 V tr 1.0 ìs tstg 2.5 ìs tf 1 ìs Switching time turn-0n time Switching storage time Switching fall time www.kexin.com.cn 1