KEXIN 2SA1954

Transistors
IC
SMD Type
Silicon PNP Epitaxial
2SA1954
Features
Low saturation voltage VCE(sat) (1) = -15 mV (typ.)
Large collector current
IC = -500 mA (max)
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-15
V
Collector-emitter voltage
VCEO
-12
V
Emitter-base voltage
VEBO
-5
V
IC
-500
mA
Collector current
Base current
IB
-50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
Tstg
-55 to +125
Storage temperature range
www.kexin.com.cn
1
Transistors
IC
SMD Type
2SA1954
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = -15 V, IE = 0
-0.1
ìA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
ìA
DC current gain
hFE
VCE = -2 V, IC = -10 mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
300
1000
VCE (sat)(1) IC = -10 mA, IB = -0.5 mA
-15
-30
mV
VCE (sat)(2) IC = -200 mA, IB = -10 mA
-110
-250
mV
IC = -200 mA, IB = -10 mA
-0.87
-1.2
V
VBE (sat)
130
MHz
Collector output capacitance
Cob
VCB = -10V, IE = 0, f = 1 MHz
4.2
pF
Collector-emitter on resistance
Ron
IB = -1mA , Vin = -1Vrms, f = 1KHz
0.9
Ù
Switching Turn-on time
ton
40
ns
Switching Storage time
tstg
280
ns
45
ns
Transition frequency
fT
Switching Fall time
VCE = -2 V, IC = -10 mA
tf
IB1 = -IB2 = 5mA
hFE Classification
2
Min
Marking
GA
GB
hFE
300 600
500 1000
www.kexin.com.cn
80