Transistors IC SMD Type Silicon PNP Epitaxial 2SA1954 Features Low saturation voltage VCE(sat) (1) = -15 mV (typ.) Large collector current IC = -500 mA (max) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -12 V Emitter-base voltage VEBO -5 V IC -500 mA Collector current Base current IB -50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range www.kexin.com.cn 1 Transistors IC SMD Type 2SA1954 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cut-off current ICBO VCB = -15 V, IE = 0 -0.1 ìA Emitter cut-off current IEBO VEB = -5 V, IC = 0 -0.1 ìA DC current gain hFE VCE = -2 V, IC = -10 mA Collector-emitter saturation voltage Base-emitter saturation voltage 300 1000 VCE (sat)(1) IC = -10 mA, IB = -0.5 mA -15 -30 mV VCE (sat)(2) IC = -200 mA, IB = -10 mA -110 -250 mV IC = -200 mA, IB = -10 mA -0.87 -1.2 V VBE (sat) 130 MHz Collector output capacitance Cob VCB = -10V, IE = 0, f = 1 MHz 4.2 pF Collector-emitter on resistance Ron IB = -1mA , Vin = -1Vrms, f = 1KHz 0.9 Ù Switching Turn-on time ton 40 ns Switching Storage time tstg 280 ns 45 ns Transition frequency fT Switching Fall time VCE = -2 V, IC = -10 mA tf IB1 = -IB2 = 5mA hFE Classification 2 Min Marking GA GB hFE 300 600 500 1000 www.kexin.com.cn 80