Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SD2185 Features Low collector-emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 3 A Peak collector current ICP 4 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10 ìA, IE = 0 50 V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 50 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 Collector-base cutoff current ICBO VCB = 20 V, IE = 0 Forward current transfer ratio hFE V 0.1 VCE = 2 V, IC = 200 mA 120 VCE = 2 V, IC = 1.0 A 80 ìA 340 Collector-emitter saturation voltage VCE(sat) IC = 1 A, IB = 50 mA 0.15 0.3 V Base-emitter saturation voltage VBE(sat) IC = 1 A, IB = 50 mA 0.85 1.2 V Transition frequency fT Collector output capacitance Cob VCB = 10 V, IE = -50 mA, f = 200 MHz 120 VCB = 10 V, IE = 0, f = 1 MHz 20 MHz 35 pF hFE Classification 1H Marking Rank R S hFE 120 240 170 340 www.kexin.com.cn 1