Junction FET SMD Type N-Channel Junction Silicon FET 2SK303 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Ideal for potentiometers, analog switches, low 0.4 3 1 0.55 impedance conversion. +0.1 1.3-0.1 +0.1 2.4-0.1 frequency amplifiers, constant current supplies, and 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1Source 2 Source Drain 2.Emitter 2. 1.Base 1. Gate 3 Drain Gate 3. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to Drain voltage VGDS -30 V Gate current IG 10 mA Drain current ID 20 mA Power dissipation PD 200 mW Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons VGDS IG=-10 IGSS VGS=-20V IDSS VDS=10V,VGS=0 Drain cut-off current VGS(off) Forward transfer admittance Drain to source on-state resistance Ciss Reverse transfer capacitance Crss IDSS VDS=10V,VGS=0,f=1MHz VGS=0,VDS=10mV RDS(on) Input capacitance A Max Unit -1.0 nA 12.0 mA -4 V VDS=10V,VGS=0,f=1MHZ V 0.6 -1 VDS=10V,ID=1 A Yfs Typ -30 Gate to drain Gate to source leakage current Cutoff voltage Min 2.5 6.0 ms 250 5 pF 1.5 pF Classification unit:mA Marking V2 V3 V4 V5 Rank 2 3 4 5 IDSS 0.6 1.5 1.2 3.0 2.5 6.0 5.0 12.0 www.kexin.com.cn 1