MOSFET SMD Type MOS Field Effect Transistor 2SK1589 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance. 0.55 Not necessary to consider driving current because of its high input +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V power supply. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current (DC) ID 100 mA Drain current(pulse) * ID 200 mA Power dissipation PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle W 5% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=100V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VGS(off) VDS=5V,ID=1 A Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Typ Max 10 1.0 0.8 20 1.5 1.8 38 Unit A A V ms VGS=4.0V,ID=10mA 19 30 VGS=10V,ID=10mA 15 25 16 pF 12 pF Crss 3 pF td(on) 17 ns tr 10 ns 68 ns 38 ns td(off) Fall time VDS=5.0V,ID=10mA Min tf VDS=5.0V,VGS=0,f=1MHZ ID=10mA,VGS(on)=5.0V,RL=500 ,VDD=5V,RG=10 Marking Marking G17 www.kexin.com.cn 1