Transistors IC SMD Type 30V Complementary PowerTrench MOSFET KI4542DY Features N-Channel 6 A, 30 V RDS(ON) = 28m @ VGS = 10V RDS(ON) = 35m @ VGS =4.5V P-Channel -6 A, -30 V RDS(ON) = 32m @ VGS =- 10 V RDS(ON) = 45m @ VGS =-4.5V Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P- Channel Unit Drain to Source Voltage VDSS 30 -30 V Gate to Source Voltage VGS Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation PD PD V A 20 -20 A 2 W 1.2 W 1 (Note 1c) Operating and Storage Temperature 20 -6 1.6 Power Dissipation for Single Operation (Note 1a) (Note 1b) 20 6 TJ, TSTG -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W Thermal Resistance Junction to Case R JC 40 /W (Note 1) www.kexin.com.cn 1 Transistors IC SMD Type KI4542DY Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 IDSS Gate-Body Leakage IGSS VGS(th) A A, Referenced to 25 ID = -250 Zero Gate Voltage Drain Current A VGS = 0 V, ID = -250 ID = 250 Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Testconditons Symbol A, Referenced to 25 N-Ch 30 P-Ch -30 23 P-Ch -21 1 VDS = -24 V, VGS = 0 V P-Ch -1 VGS = 20V, VDS = 0 V N-Ch 100 VGS = 20 V, VDS = 0 V P-Ch 100 VDS = VGS, ID = 250 A A N-Ch 1 1.5 3 P-Ch -1 -1.7 -3 N-Ch -4 P-Ch 4 19 28 N-Ch 32 48 VGS = 4.5 V, ID = 5A 25 35 VGS = -10 V, ID =-6 A 21 32 29 51 30 45 ID = 250 A, Referenced to 25 A, Referenced to 25 Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID =6A,TJ=125 VGS = -10 V, ID =-5 A,TJ=125 P-Ch VGS = -4.5 V, ID =-5A On-State Drain Current Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge 2 ID(on) www.kexin.com.cn Qgd VGS = 10 V, VDS = 5V N-Ch 20 VGS = -10 V, VDS = -5V P-Ch -20 VDS = 15V, ID = 6A N-Ch 18 P-Ch 16 N-Channel N-Ch 830 VDS = 15 V, VGS = 0 V,f = 1.0 MHz P-Ch 1540 N-Ch 185 P-Channel P-Ch 400 VDS = -15 V, VGS = 0 V,f = 1.0 MHz N-Ch 80 P-Ch 170 m pF pF pF N-Ch 6 12 P-Ch 13 24 N-Ch 10 18 P-Ch 22 35 P-Channel N-Ch 18 29 VDD = -15 V, ID = -1 A, P-Ch 47 75 N-Ch 5 12 P-Ch 18 30 (Note 2) V S VDD = 15 V, ID = 1 A, VGS = -10 V, RGEN = 6 nA mV/ N-Channel (Note 2) A A VDS = -10V, ID = -6A VGS = 10 V, RGEN = 6 Unit mV/ N-Ch ID = -250 RDS(on) Max V N-Ch VGS = 10 V, ID =6A Static Drain-Source On-Resistance Typ VDS = 24V, VGS = 0 V VDS = VGS, ID = -250 Gate Threshold Voltage Temperature Coefficient Min N-Channel N-Ch 9 13 VDS =15V,ID=7.5A,VGS=5V(Note 2) P-Ch 15 20 N-Ch 2.8 P-Channel P-Ch 4 VDS=-10V,ID=-6A,VGS=-5V(Note 2) N-Ch 3.1 P-Ch 5 ns ns ns ns nC nC nC Transistors IC SMD Type KI4542DY Electrical Characteristics Ta = 25 Parameter Symbol Maximum Continuous Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage VSD Testconditons Min Typ Max N-Ch 1.3 P-Ch -1.3 VGS = 0 V, IS = 1.3A (Not 2) N-Ch 0.7 1.2 VGS = 0 V, IS = -1.3A (Not 2) P-Ch -0.7 -1.2 Unit A V www.kexin.com.cn 3