IC IC SMD Type MOS Field Effect Transistor KPA1764 Features Dual chip type Low on-state resistance RDS(on)1 = 27 m TYP. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 32 m TYP. (VGS = 4.5 V, ID = 3.5 A) RDS(on)3 = 34 m TYP. (VGS = 4.0 V, ID = 3.5 A) 1 : Source 1 2 : Gate 1 Low input capacitance 7, 8 : Drain 1 3 : Source 2 Ciss = 1300 pF TYP. 4 : Gate 2 Built-in G-S protection diode 5, 6 : Drain 2 Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating 60 Unit Drain to Source Voltage (VGS = 0) VDSS Gate to Source Voltage (VDS = 0) VGSS 20 V Drain Current (DC) ID(DC) 7 A Drain Current (Pulse) *1 ID(pulse) 28 V A Total Power Dissipation (1 unit) *2 PT 1.7 W Total Power Dissipation (2 unit) *2 PT 2.0 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to + 150 Single Avalanche Current *3 IAS 7 A EAS 98 mJ Single Avalanche Energy *3 *1 PW 10 s, Duty cycle 1% *2 Mounted on ceramic substrate of 2000 mm2 X1.1 mm *3 Starting Tch = 25 , VDD = 30 V, RG = 25 , VGS = 20 0V www.kexin.com.cn 1 IC IC SMD Type KPA1764 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Testconditons IDSS VDS = 60 V, VGS = 0 IGSS VGS = VGS(off) Min Typ Max Unit 10 20 V, VDS = 0 A 10 VDS = 10 V, ID = 1 mA 1.5 5.0 2.0 2.5 A V | yfs | VDS = 10 V, ID = 3.5 A RDS(on)1 VDS = 10 V, ID = 3.5 A 27 35 m RDS(on)2 VGS = 4.5V, ID = 3.5 A 32 42 m RDS(on)3 VGS = 4.0 V, ID = 3.5 A 34 46 m Input Capacitance Ciss Output Capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz 9 S 1300 pF 230 pF Reverse Transfer Capacitance Crss 110 pF Turn-on Delay Time td(on) 15 ns 69 ns Rise Time Turn-off Delay Time Fall Time Total Gate Charge tr td(off) ID = 3.5 A, VGS = 10 V, VDD =30 V,RG = 10 65 ns tf 27 ns QG 29 nC 3.6 nC 7.4 nC 0.84 V Gate to Source Charge QGS Gate to Drain Charge QGD Body Diode forward Voltage 2 Symbol VF(S-D) ID = 7.0A, VDD = 48V, VGS = 10 V IF = 7.0 A, VGS = 0 Reverse Recovery Time trr IF = 7.0 A, VGS = 0 V 40 ns Reverse Recovery Charge Qrr di/dt = 100 A/ 66 nC www.kexin.com.cn s