MOSFET SMD Type MOS Field Effect Transistor 2SK3668 TO-263 +0.1 1.27-0.1 Features Low gate charge Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 MAX. (VGS = 10 V, ID = 5.0 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on) = 0.55 Surface mount package available +0.2 2.54-0.2 +0.2 15.25-0.2 Low on-state resistance +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 30 V +0.2 8.7-0.2 Gate voltage rating: 5.60 QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 400 V Gate to source voltage VGSS 30 V ID 10 A 34 A Drain current Idp * Power dissipation TA=25 1.5 PD W 100 TC=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Symbol Testconditons IDSS VDS=400V,VGS=0 Min IGSS VGS= 30V,VDS=0 VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=5.0A 3.0 RDS(on)1 VGS=10V,ID=5.0A Input capacitance Ciss Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Max 10 VGS(off) Output capacitance Typ 100 3.5 5.6 0.4 Unit A nA V S 0.55 1320 pF 230 pF Crss 13 pF ton 18 ns 8 ns VDS=10V,VGS=0,f=1MHZ ID=5.0A,VGS(on)=10V,RG=10 ,VDD=150V 44 ns 4 ns VDD = 320V VGS = 10 V ID =10A 26 nC 7 nC 11 nC VF(S-D) IF = 10 A, VGS = 0 V 0.9 V Reverse Recovery Time trr IF = 10 A, VGS = 0 V 350 ns Reverse Recovery Charge Qrr di/dt = 100 A/ ìs 2.7 ìC Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD Body Diode Forward Voltage www.kexin.com.cn 1