IC IC SMD Type MOS Field Effect Transistor KPA1716 Features Low on-state resistance RDS(on)1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A) RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A) RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A) Low Ciss : Ciss = 2100 pF TYP. Built-in G-S protection diode Small and surface mount package Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDSS -30 V Gate to Source Voltage (VDS = 0) VGSS 20 V Drain Current (DC) Ta = 25 ID(DC) 8 A ID(pulse) 32 A Drain to Source Voltage (VGS = 0) Drain Current (Pulse) *1 PT 2.0 Channel Temperature Tch 150 Storage Temperature Tstg -55 to + 150 Total Power DissipationTa = 25 *1 PW 10 s, Duty cycle *2 W 1% *2 Mounted on ceramic substrate of 1200mm2 X1.0 mm www.kexin.com.cn 1 IC IC SMD Type KPA1716 Electrical Characteristics Ta = 25 Parameter Drain to Source On-state Resistance Gate Cut-off Voltage Testconditons Min Typ Max Unit RDS(on)1 VDS = -10V, ID = -4.0 A 12.5 16 m RDS(on)2 VGS = -4.5V, ID = -4.0 A 17 23 m RDS(on)3 VGS = -4.0V, ID = -4.0 A 19 26 m -2.5 VGS(off) VDS = -10 V, ID = 1 mA -1.0 -1.6 Forward Transfer Admittance | yfs | VDS = 10 V, ID = -4.0A 7 14 Zero Gate Voltage Drain Current IDSS VDS = -30 V, VGS = 0 Gate Leakage Current IGSS VGS = Input Capacitance Ciss Output Capacitance Coss -1 20V, VDS = 0 VDS = -10 V, VGS = 0, f = 1 MHz V S 10 A A 2100 pF 700 pF Reverse Transfer Capacitance Crss 300 pF Turn-on Delay Time td(on) 30 ns 150 ns Rise Time Turn-off Delay Time Fall Time tr td(off) ID = -4.0 A, VGS(on) = -10 V, VDD =-15 V,RG = 10 tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD Body Diode forward Voltage 2 Symbol VF(S-D) ID = -8.0A, VDD = -24V, VGS = -10 V 120 ns 76 ns 40 nC 6 nC 10 nC IF = 8.0 A, VGS = 0 0.8 V Reverse Recovery Time trr IF = 8.0 A, VGS = 0 V 45 ns Reverse Recovery Charge Qrr di/dt = 100 A/ 33 nC www.kexin.com.cn s