IC IC SMD Type MOS Field Effect Transistor KPA1750 Features Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 TYP. (VGS = -10 V, ID = -1.8 A) RDS(on)2 = 0.18 TYP. (VGS = -4 V, ID = -1.8A) Low Ciss : Ciss = 540 pF TYP. Built-in G-S protection diode Small and surface mount package 1: Source 1 3: Source 2 2: Gate 1 4: Gate 2 7,8: Drain 1 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS -20 V Gate to Source Voltage VGSS 20 V ID(DC) 3.5 A ID(pulse) 14 A Drain Current (DC) Ta = 25 Drain Current (Pulse) *1 Total Power DissipationTa = 25 *2 Total Power DissipationTa = 25 *2 PT 1.7 W 2.0 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to + 150 *1 PW 10 s, Duty cycle 1% *2 Mounted on ceramic substrate of 1200mm2 X1.0 mm www.kexin.com.cn 1 IC IC SMD Type KPA1750 Electrical Characteristics Ta = 25 Parameter Drain to Source On-state Resistance Gate Cut-off Voltage Testconditons Min Typ Max Unit RDS(on)1 VDS = -10V, ID = -1.8 A 0.065 0.090 m RDS(on)2 VGS = -4V, ID = -1.8 A 0.125 0.180 m VGS(off) VDS = -10 V, ID = -1 mA -1.0 -1.7 2.0 4.4 Forward Transfer Admittance | yfs | VDS = -10 V, ID = -1.8A Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 Gate Leakage Current IGSS VGS = -2.5 S -10 20V, VDS = 0 V 10 A A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) 10 ns tr 110 ns 340 ns Rise Time Turn-off Delay Time td(off) VDS = -10 V, VGS = 0, f = 1 MHz ID = -1.8 A, VGS(on) = -10 V, VDD =-10 V,RG = 10 540 pF 385 pF 105 pF tf 230 ns Total Gate Charge QG 18 nC Gate to Source Charge QGS 2.0 nC Fall Time Gate to Drain Charge Body Diode forward Voltage 2 Symbol ID = -3.5A, VDD = -16V, VGS = -10 V 5.1 nC IF = 3.5 A, VGS = 0 0.8 V QGD VF(S-D) Reverse Recovery Time trr IF = 3.5 A, VGS = 0 V 160 ns Reverse Recovery Charge Qrr di/dt = 100 A/ 310 nC www.kexin.com.cn s