KEXIN KPA1790

IC
IC
SMD Type
MOS Field Effect Transistor
KPA1790
Features
Dual chip type
Low on-state resistance
N-channel RDS(on)1 = 0.12
TYP. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 1.19
P-channel RDS(on)1 = 0.45
TYP. (VGS = 4 V, ID = 0.5 A)
TYP. (VGS = -10 V, ID = -0.35 A)
RDS(on)2 = 0.74
TYP. (VGS = -4 V, ID = -0.35 A)
Low input capacitance
N-channel Ciss = 180 pF TYP.
P-channel Ciss = 230 pF TYP.
Built-in G-S protection diode
Small and surface mount package
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
N-Channel
P- Channel
Unit
VDSS
60
-60
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VGSS
20
20
V
Drain Current (DC)
ID(DC)
1.0
0.7
A
ID(pulse)
4.0
2.8
A
Drain Current (pulse) *1
Total Power Dissipation (1 unit) *2
PT
1.7
W
Total Power Dissipation (2 units) *2
PT
2
W
Channel Temperature
Tch
150
Storage Temperature
Tstg
Single Avalanche Current *3
IAS
0.5
-0.35
A
Single Avalanche Energy *3
EAS
0.02
0.01
mJ
*1. PW
10
s, Duty Cycle
-55 to +150
1%
*2. Mounted on ceramic substrate of 2000 mm2 X 2.25 mm
*3. Starting Tch = 25 , VDD = 30 V, RG = 25
, VGS = 20
0V
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1
IC
IC
SMD Type
KPA1790
Electrical Characteristics Ta = 25
Parameter
Zero Gate Voltage Drain Current
IDSS
Gate Leakage Current
IGSS
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
| yfs |
N-Ch
10
VGS =
16 V, VDS = 0 V
P- Ch
10
VDS = 10 V, ID = 1 mA
N-Ch
1.0
1.7
2.5
VDS = -10 V, ID = -1 mA
P- Ch
-1.0
-1.7
-2.5
VDS = 10 V, ID = 0.5 A
N-Ch
1.0
1.7
VDS = -10 V, ID = -0.35A
P- Ch
5.0
VGS = -4 V, ID = -0.35 A
tr
td(off)
tf
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
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16 V, VDS = 0 V
RDS(on)2
td(on)
Body Diode Forward Voltage Note
VGS =
VGS = -10 V, ID = -0.35 A
Turn-on Delay Time
Total Gate Charge
10
-10
RDS(on)1
Crss
Fall Time
N-Ch
VGS = 4 V, ID = 0.5 A
Reverse Transfer Capacitance
Max
P- Ch
VGS = 10 V, ID = 0.5 A
Coss
Typ
VDS = 60 V, VGS = 0 V
RDS(on)2
Output Capacitance
Min
VDS = -60V, VGS = 0 V
RDS(on)1
Ciss
Turn-off Delay Time
2
VGS(off)
Input Capacitance
Rise Time
Testconditons
Symbol
N-Ch
P- Ch
0.26
0.19
0.34
0.45
0.6
0.74
1.1
N-Ch
180
VDS = 10 V,VGS = 0 V,f = 1 MHz
P- Ch
230
N-Ch
100
P- Channel
P- Ch
100
VDS = -10 V,VGS = 0 V,f = 1 MHz
N-Ch
35
P- Ch
25
N-Channel
N-Ch
1
VDD = 30 V, ID =0.5 A,VGS = 10 V
P- Ch
1.9
RG = 10
N-Ch
1.4
P- Ch
1.7
P- Channel
N-Ch
23
VDD = -30 V, ID = -0.35 A,VGS = -10 V
P- Ch
30
N-Ch
17
P- Ch
15
N-Channel
N-Ch
8
ID = 1.0 A,VDD = 48 V,VGS = 10 V
P- Ch
7.6
N-Ch
1
P- Channel
P- Ch
1
ID = -0.7 A,VDD = -48 V,VGS = -10 V
N-Ch
3.5
P- Ch
2
RG = 10
IF = 1.0 A, VGS = 0 V
N-Ch
0.75
IF = 0.7 A, VGS = 0 V
P- Ch
0.85
N-Channel
N-Ch
30
s
P- Ch
58
N-Ch
33
s
P- Ch
130
IF = 1.0A, VGS = 0 V,di/dt = 100 A/
P-Channel
IF = 0.7A, VGS = 0 V,di/dt = 100 A/
A
A
V
S
0.12
N-Channel
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC