IC IC SMD Type MOS Field Effect Transistor KPA1890 TSSOP-8 Features Unit: mm Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 37 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)3 = 47 m P-channel RDS(on)1 = 37 m MAX. (VGS = 4.0 V, ID = 3 A) MAX. (VGS = -10 V, ID = -2.5 A) RDS(on)2 = 56 m MAX. (VGS = -4.5 V, ID = -2.5 A) RDS(on)3 = 64 m MAX. (VGS = -4.0 V, ID = -2.5 A) 1 Built-in G-S protection diode against ESD :Drain1 5 :Gate2 2, 3 :Source1 6, 7 :Source2 4 8 :Gate1 :Drain2 Absolute Maximum Ratings Ta = 25 Symbol N-Channel P- Channel Unit Drain to Source Voltage (VGS = 0 V) Parameter VDSS 30 -30 V Gate to Source Voltage (VDS = 0 V) VGSS 20 20 ID(DC) 6.0 5.0 A 20 A Drain Current (DC) Drain Current (pulse) *1 ID(pulse) Total Power Dissipation *2 PT 24 2 Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 *1 PW 10 s, Duty Cycle V W 1% *2 Mounted on ceramic substrate of 5000 mm2 X 1.1 mm www.kexin.com.cn 1 IC IC SMD Type KPA1890 Electrical Characteristics Ta = 25 Parameter Zero Gate Voltage Drain Current IDSS Gate Leakage Current IGSS Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance | yfs | P- Ch -10 VGS = 16 V, VDS = 0 V N-Ch 10 VGS = 16 V, VDS = 0 V P- Ch 10 VDS = 10 V, ID = 1 mA N-Ch 1.5 1.8 2.5 VDS = -10 V, ID = -1 mA P- Ch -1.3 -1.8 -2.3 VDS = 10 V, ID = 3.0 A N-Ch 3 7.6 VDS = -10 V, ID = -2.5 A P- Ch 3 7.8 RDS(on)3 Unit A A V S 18 27 m 24 37 m VGS = 4.0 V, ID = 3.0A 27 47 m RDS(on)1 VGS = -10 V, ID = -2.5 A 28 37 m RDS(on)2 VGS = -4.5 V, ID = -2.5 A P- Ch 42 56 m RDS(on)3 VGS = -4.0 V, ID = -2.5 A 47 64 m N-Channel N-Ch 748 VDS = 10 V,VGS = 0 V,f = 1 MHz P- Ch 851 N-Ch 227 P- Ch 279 Crss Turn-on Delay Time td(on) tr td(off) tf QG Gate to Source Charge QGS Gate to Drain Charge QGD VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr www.kexin.com.cn VDS = -30V, VGS = 0 V VGS = 4.5 V, ID = 3.0 A Reverse Transfer Capacitance Body Diode Forward Voltage Note Max 10 VGS = 10 V, ID = 3.0 A Coss Total Gate Charge Typ N-Ch RDS(on)2 Output Capacitance Fall Time Min VDS = 30 V, VGS = 0 V RDS(on)1 Ciss Turn-off Delay Time 2 VGS(off) Input Capacitance Rise Time Testconditons Symbol N-Ch P- Channel VDS = -10 V,VGS = 0 V,f = 1 MHz N-Ch 107 P- Ch 128 N-Channel N-Ch 20 VDD = 15 V, ID = 3.0 A,VGS = 10 V P- Ch 17 RG = 10 N-Ch 80 P- Ch 52 P- Channel N-Ch 48 VDD = -15 V, ID = -2.5 A,VGS = -10 V P- Ch 84 RG = 10 N-Ch 30 P- Ch 73 N-Channel N-Ch 14 ID = 6.0 A,VDD = 24 V,VGS = 10 V P- Ch 15 N-Ch 1.9 P- Channel P- Ch 1.9 ID = -5.0 A,VDD = -24 V,VGS = -10 V N-Ch 3.8 P- Ch 4.2 IF = 6. A, VGS = 0 V N-Ch 0.82 IF = 5.0 A, VGS = 0 V P- Ch 0.83 N-Channel N-Ch 31 s P- Ch 38 N-Ch 32 s P- Ch 35 IF = 6 A, VGS = 0 V,di/dt = 100 A/ P- Channel IF = 5 A, VGS = 0 V,di/dt = 100 A/ pF pF pF ns ns ns ns nC nC nC V ns nC