SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered MOSFET portable electronics. BVDSS Features • RDS(ON) Typ. ID Max 48mΩ @ VGS=-4.5V -20V -5.3A 65mΩ @ VGS=-2.5V Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive (MOSFET) • Performance DFN Package • This is a Halogen−Free Device PNP BJT Applications • BVCEO BVEBO. IC Max -12V -5V -5A Power Management in Portable and Battery−Powered Products; i.e., Marking Diagram Cellular and Cordless Telephones and PCMCIA Cards 1 SUM202 YMM Ordering Information Device Marking Package SUM202MN SUM202 DFN8 Column 1 : Device Code Column 2 : Date Code (year, month) PIN Connection Simple Schematic 1 8 Emitter 8 1 N/C Collector 2 7 3 6 Base 7 2 Collector N/C 6 3 Source Drain 4 Gate 5 5 4 Drain Bottom View KSD-T6T001-001 1 SUM202MN Absolute maximum ratings for P-Ch MOSFET Characteristic (Ta=25C) Rating Symbol 5sec Steady State Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS 12 V Drain current (DC) (Note.1) ID Drain current (Pulsed) IDP Continuous Source current IS Total Power dissipation (Note.1) PD Operating Junction and Storage Temperature Range TA=25℃ -5.3 -3.9 A TA=85℃ -3.8 -2.8 A 20 A -5.3 -3.9 A TA=25℃ 2.5 1.3 W TA=85℃ 1.3 0.7 W TJ , Tstg C -55 ~ 150 Absolute maximum ratings for PNP Transistor Characteristic (Ta=25C) Symbol Rating Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -5 V Collector current – continuous IC -5 A Peak Collector current ICM -15 A Thermal Characteristics for P-Ch MOSFET Characteristic Junction to Ambient Symbol (Note.5) RTH(J-A) Junction to Foot (Drain) RTH(J-F) Condition Typ. Max. t≤ 5 sec 40 50 Steady State 80 95 Steady State 15 20 Unit ℃/W ℃/W Thermal Characteristics for PNP Transistor Characteristic Symbol Total Device Dissipation PD Thermal Resistance, Junction to Ambient (Note.2) RTH(J-A) Total Device Dissipation PD (Note.2) (Note.3) Max. Unit 635 mW 200 ℃/W 1.35 W Thermal Resistance, Junction to Ambient RTH(J-A) (Note.3) 90 ℃/W Thermal Resistance, Junction to Lead #1 RTH(J-L) 15 ℃/W 2.75 W -55 ~ 150 ℃ Total Device Dissipation (Single Pulse < 10 sec) PDsingle Junction and Storage Temperature Range (Note.3&4) TJ, Tstg 1. Surface Mounted on FR4 Board using 1in square pad size (Cu area =1.27 in square [1 oz] including traces) 2. FR−4 @ 100 mm2, 1 oz copper traces. 3. FR−4 @ 500 mm2, 1 oz copper traces. 4. Thermal response. KSD-T6T001-001 2 SUM202MN Electrical Characteristics for P-Ch MOSFET Characteristic Symbol Test Condition (Ta=25C) Min. Typ. Max. Unit - - V -1.2 V Static Drain-source breakdown voltage BVDSS ID=-250A, VGS=0 -20 Gate threshold voltage VGS(th) ID=-250A, VDS=VGS -0.6 Drain-source cut-off current IDSS VDS=-20V, VGS=0V - - -1 A Gate leakage current IGSS VDS=0V, VGS=12V - - 100 nA ID(ON) VDS≤ -5.0V, VGS=-4.5V -20 - - A VGS=-3.6V, ID=-1.0A - 50 60 VGS=-2.5V, ID=-1.0A - 70 83 gfs VDS=-10V, ID=-3.9A - 12 - S VSD IS=-2.1A, VGS=0V - -0.8 -1.2 V - 710 - - 400 - On-State Drain Current (Note.6) Drain-source on-resistance (Note.6) Forward transfer conductance Diode Forward Voltage (Note.6) (Note.6) RDS(ON) m Dynamic (Note.7) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss - 140 - Turn-on delay time td(on) - 14 30 Rise time tr - 22 55 Turn-off delay time td(off) - 42 100 Fall time tf - 35 70 Total gate charge Qg - 9.7 22 - 1.2 - - 3.6 - Gate-source charge Qgs Gate-drain charge Qgd VGS=0V, VDS=-5V, f=1MHz VDD=-10V, ID=-1.0A RG=6Ω, RD=10Ω VGS=-4.5V VDD=-10V, VGS=-4.5V ID=-3.9A pF ns nC 5. Surface Mounted on FR4 Board using 1 inch square pad size (Cu area =1.27 inch square [1 oz] including traces). 6. Pulse Test : Pulse Width≤ 300us, Duty Cycle≤2%. 7. Guaranteed by design, not subject to production testing. KSD-T6T001-001 3 SUM202MN Electrical Characteristics for PNP Transistor Characteristic Symbol Test Condition (Ta=25C) Min. Typ. Max. Unit Off Characteristics Collector-Base breakdown voltage BVCBO IC=-50A, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE=-50A, IC=0 -5 - - V Collector cut-off current ICBO VCB=-15V, IE=0 - - -1 A Emitter cut-off current IEBO VEB=-5V, IC=0 - - -1 A hFE* VCE=-2V, IC=-500mA 160 - 320 - VBE(on) VCE=-2V, IC=-500mA - - -1 V Collector-Emitter saturation voltage (Note.8) VCE(sat) IC=-3A, IB=-150mA - -0.2 -0.5 V Transition frequency fT VCB=-5V, IC=-500mA - 150 - MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - - 50 pF On Characteristics DC current gain (Note.8) Base-Emitter on voltage (Note.8) 8. Pulse Test : Pulse Width≤ 300us, Duty Cycle≤ 2%. KSD-T6T001-001 4 SUM202MN Electrical Characteristic Curves (P-Channel MOSFET) Fig. 1 ID - VDS Fig. 2 ID - VGS - - ℃ - - m - Fig. 3 RDS(on) - ID ℃ - a Fig. 4 IS - VSD - - Fig. 6 VGS - QG Fig. 5 Capacitance - VDS ℃ KSD-T6T001-001 5 SUM202MN Electrical Characteristics (P-Channel MOSFET) Fig. 8 RDS(on) - TJ - Fig. 7 VDSS - TJ C C - Fig. 9 ID - Ta KSD-T6T001-001 6 SUM202MN Electrical Characteristic Curves (PNP BJT) Fig. 2 Ic - VBE Fig. 1 Pc - Ta Fig. 4 VCE(sat) - IC Fig. 3 hFE - IC KSD-T6T001-001 7 SUM202MN Outline Dimension unit : mm ※ Recommended Land Pattern [unit: mm] KSD-T6T001-001 8 SUM202MN The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T6T001-001 9