KODENSHI SUM202MN

SUM202MN
P-Channel MOSFET + PNP BJT
Integrated Power MOSFET
with PNP Low VCE(sat) Switching Transistor
DFN-8
This integrated device represents a new level of safety and
8
board−space reduction by combining the 20V P−Channel FET with a
1
PNP Silicon Low VCE(sat) switching transistor. This newly integrated
product provides higher efficiency and accuracy for battery powered
MOSFET
portable electronics.
BVDSS
Features
•
RDS(ON) Typ.
ID Max
48mΩ
@ VGS=-4.5V
-20V
-5.3A
65mΩ
@ VGS=-2.5V
Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
• Higher Efficiency Extending Battery Life
•
Logic Level Gate Drive (MOSFET)
•
Performance DFN Package
•
This is a Halogen−Free Device
PNP BJT
Applications
•
BVCEO
BVEBO.
IC Max
-12V
-5V
-5A
Power Management in Portable and Battery−Powered Products; i.e.,
Marking Diagram
Cellular and Cordless Telephones and PCMCIA Cards
1
SUM202
YMM
Ordering Information
Device
Marking
Package
SUM202MN
SUM202
DFN8
Column 1 : Device Code
Column 2 : Date Code (year, month)
PIN Connection
Simple Schematic
1
8
Emitter
8
1 N/C
Collector
2
7
3
6
Base
7
2 Collector
N/C 6
3 Source
Drain
4
Gate
5
5
4 Drain
Bottom View
KSD-T6T001-001
1
SUM202MN
Absolute maximum ratings for P-Ch MOSFET
Characteristic
(Ta=25C)
Rating
Symbol
5sec
Steady State
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
12
V
Drain current (DC) (Note.1)
ID
Drain current (Pulsed)
IDP
Continuous Source current
IS
Total Power dissipation
(Note.1)
PD
Operating Junction and
Storage Temperature Range
TA=25℃
-5.3
-3.9
A
TA=85℃
-3.8
-2.8
A
20
A
-5.3
-3.9
A
TA=25℃
2.5
1.3
W
TA=85℃
1.3
0.7
W
TJ , Tstg
C
-55 ~ 150
Absolute maximum ratings for PNP Transistor
Characteristic
(Ta=25C)
Symbol
Rating
Unit
Collector-Base voltage
VCBO
-15
V
Collector-Emitter voltage
VCEO
-12
V
Emitter-Base voltage
VEBO
-5
V
Collector current – continuous
IC
-5
A
Peak Collector current
ICM
-15
A
Thermal Characteristics for P-Ch MOSFET
Characteristic
Junction to Ambient
Symbol
(Note.5)
RTH(J-A)
Junction to Foot (Drain)
RTH(J-F)
Condition
Typ.
Max.
t≤ 5 sec
40
50
Steady State
80
95
Steady State
15
20
Unit
℃/W
℃/W
Thermal Characteristics for PNP Transistor
Characteristic
Symbol
Total Device Dissipation
PD
Thermal Resistance, Junction to Ambient
(Note.2)
RTH(J-A)
Total Device Dissipation
PD
(Note.2)
(Note.3)
Max.
Unit
635
mW
200
℃/W
1.35
W
Thermal Resistance, Junction to Ambient
RTH(J-A) (Note.3)
90
℃/W
Thermal Resistance, Junction to Lead #1
RTH(J-L)
15
℃/W
2.75
W
-55 ~ 150
℃
Total Device Dissipation (Single Pulse < 10 sec)
PDsingle
Junction and Storage Temperature Range
(Note.3&4)
TJ, Tstg
1. Surface Mounted on FR4 Board using 1in square pad size (Cu area =1.27 in square [1 oz] including traces)
2. FR−4 @ 100 mm2, 1 oz copper traces.
3. FR−4 @ 500 mm2, 1 oz copper traces.
4. Thermal response.
KSD-T6T001-001
2
SUM202MN
Electrical Characteristics for P-Ch MOSFET
Characteristic
Symbol Test Condition
(Ta=25C)
Min.
Typ.
Max.
Unit
-
-
V
-1.2
V
Static
Drain-source breakdown voltage
BVDSS
ID=-250A, VGS=0
-20
Gate threshold voltage
VGS(th)
ID=-250A, VDS=VGS
-0.6
Drain-source cut-off current
IDSS
VDS=-20V, VGS=0V
-
-
-1
A
Gate leakage current
IGSS
VDS=0V, VGS=12V
-
-
100
nA
ID(ON)
VDS≤ -5.0V, VGS=-4.5V
-20
-
-
A
VGS=-3.6V, ID=-1.0A
-
50
60
VGS=-2.5V, ID=-1.0A
-
70
83
gfs
VDS=-10V, ID=-3.9A
-
12
-
S
VSD
IS=-2.1A, VGS=0V
-
-0.8
-1.2
V
-
710
-
-
400
-
On-State Drain Current
(Note.6)
Drain-source on-resistance
(Note.6)
Forward transfer conductance
Diode Forward Voltage
(Note.6)
(Note.6)
RDS(ON)
m
Dynamic (Note.7)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
-
140
-
Turn-on delay time
td(on)
-
14
30
Rise time
tr
-
22
55
Turn-off delay time
td(off)
-
42
100
Fall time
tf
-
35
70
Total gate charge
Qg
-
9.7
22
-
1.2
-
-
3.6
-
Gate-source charge
Qgs
Gate-drain charge
Qgd
VGS=0V, VDS=-5V,
f=1MHz
VDD=-10V, ID=-1.0A
RG=6Ω, RD=10Ω
VGS=-4.5V
VDD=-10V, VGS=-4.5V
ID=-3.9A
pF
ns
nC
5. Surface Mounted on FR4 Board using 1 inch square pad size (Cu area =1.27 inch square [1 oz] including traces).
6. Pulse Test : Pulse Width≤ 300us, Duty Cycle≤2%.
7. Guaranteed by design, not subject to production testing.
KSD-T6T001-001
3
SUM202MN
Electrical Characteristics for PNP Transistor
Characteristic
Symbol Test Condition
(Ta=25C)
Min.
Typ.
Max.
Unit
Off Characteristics
Collector-Base breakdown voltage
BVCBO
IC=-50A, IE=0
-15
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-12
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=-50A, IC=0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-15V, IE=0
-
-
-1
A
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-
-
-1
A
hFE*
VCE=-2V, IC=-500mA
160
-
320
-
VBE(on)
VCE=-2V, IC=-500mA
-
-
-1
V
Collector-Emitter saturation
voltage (Note.8)
VCE(sat)
IC=-3A, IB=-150mA
-
-0.2
-0.5
V
Transition frequency
fT
VCB=-5V, IC=-500mA
-
150
-
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
-
50
pF
On Characteristics
DC current gain
(Note.8)
Base-Emitter on voltage
(Note.8)
8. Pulse Test : Pulse Width≤ 300us, Duty Cycle≤ 2%.
KSD-T6T001-001
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SUM202MN
Electrical Characteristic Curves (P-Channel MOSFET)
Fig. 1 ID - VDS
Fig. 2 ID - VGS
-
-
℃
-
-
m
-
Fig. 3 RDS(on) - ID
℃
-
a
Fig. 4 IS - VSD
-
-
Fig. 6 VGS - QG
Fig. 5 Capacitance - VDS
℃
KSD-T6T001-001
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SUM202MN
Electrical Characteristics (P-Channel MOSFET)
Fig. 8 RDS(on) - TJ
-
Fig. 7 VDSS - TJ
C
C
-
Fig. 9 ID - Ta
KSD-T6T001-001
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SUM202MN
Electrical Characteristic Curves (PNP BJT)
Fig. 2 Ic - VBE
Fig. 1 Pc - Ta
Fig. 4 VCE(sat) - IC
Fig. 3 hFE - IC
KSD-T6T001-001
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SUM202MN
Outline Dimension
unit : mm
※ Recommended Land Pattern [unit: mm]
KSD-T6T001-001
8
SUM202MN
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T6T001-001
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