TPCA8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCA8009-H High Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications • High-speed switching • Small gate charge: QSW = 3.7 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 0.23Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 0.15±0.05 4 0.95±0.05 1 5.0±0.2 0.05 S S Symbol Rating Unit Drain-source voltage VDSS 150 V Drain-gate voltage (RGS = 20 kΩ) VDGR 150 V Gate-source voltage VGSS ±20 V (Note 1) ID 7 Pulsed (Note 1) IDP 14 PD 45 W PD 2.8 W PD 1.6 W EAS 34 mJ IAR 7 A EAR 1.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 4 4.25±0.2 8 DC Drain current Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) A 0.595 A 3.5±0.2 0.6±0.1 1 Absolute Maximum Ratings (Ta = 25°C) Characteristic 0.05 M A 5 0.166±0.05 Small footprint due to a small and thin package 0.4±0.1 1.1±0.2 6.0±0.3 • 1.27 8 5.0±0.2 0.5±0.1 Unit: mm 5 0.8±0.1 1, 2, 3 : SOURCE 4 : GATE 5, 6, 7, 8 : DRAIN JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.068 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-12-18 TPCA8009-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8009-H Type * Lot No. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1mH, RG = 25 Ω, IAR = 7 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-12-18 TPCA8009-H Electrical Characteristics (Ta = 25°C) Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 150 V, VGS = 0 V ⎯ ⎯ 100 μA ID = 10 mA, VGS = 0 V 150 ⎯ ⎯ ID = 10 mA, VGS = −5 V 150 ⎯ ⎯ ID = 10 mA, VGS = −20 V 100 ⎯ ⎯ Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 3.5 A ⎯ 0.23 0.35 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 3.5 A 2.1 4.5 ⎯ S Input capacitance Ciss ⎯ 600 ⎯ Reverse transfer capacitance Crss ⎯ 20 ⎯ Output capacitance Coss ⎯ 220 ⎯ ID = 3.5 A VOUT ⎯ 8 ⎯ RL = 21 Ω Characteristic ⎯ 17 ⎯ ⎯ 13 ⎯ ⎯ 70 ⎯ ⎯ 10 ⎯ ⎯ 7.6 ⎯ ⎯ 2.4 ⎯ ⎯ 3.7 ⎯ V (BR) DSS Drain-source breakdown voltage V (BR) DSX Gate threshold voltage Rise time tr VGS 10 V 0V ton 4.7 Ω Turn-ON time VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time Fall time tf Turn-OFF time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd Gate switch charge Qsw VDD ∼ − 75 V < Duty = 1%, tw = 10 μs VDD ∼ − 120 V, VGS = 10 V, ID = 7 A V pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 14 A ⎯ ⎯ −2.0 V VDSF IDR = 7 A, VGS = 0 V 3 2007-12-18 TPCA8009-H ID – VDS 10 Common source Ta = 25°C Pulse test 10 6 7 8 16 (A) ID 5.5 6 4 5 2 4.5 Drain current ID Drain current Common source Ta = 25°C Pulse test 8 10 7 (A) 8 ID – VDS 20 6.5 12 6 8 5.5 5 4 VGS = 4.5 V VGS = 4 V 0 0 0 1 2 3 Drain-source voltage 4 VDS 5 0 (V) 4 8 ID – VGS 20 (V) Common source Ta = 25°C Pulse test 4 VDS (A) 8 Drain-source voltage ID Drain current 12 25 4 0 100 0 2 4 6 Gate-source voltage 8 VGS 3 2 3.5 1 1.7 0 10 ID = 7 A 0 (V) 4 8 10000 Common source VDS = 10 V Pulse test 10 Ta = −55°C 100 1 0.1 0.1 25 1 Drain current 10 ID 16 VGS 20 (V) RDS (ON) – ID Drain-source ON-resistance RDS (ON) (mΩ) |Yfs| 100 12 Gate-source voltage |Yfs| – ID (S) 20 (V) VDS – VGS Ta = −55°C Forward transfer admittance 16 VDS 5 Common source VDS = 10 V Pulse test 16 12 Drain-source voltage VGS = 10 V Pulse test 1000 100 10 0.1 100 (A) Common source Ta = 25°C 1 Drain current 4 10 ID 100 (A) 2007-12-18 TPCA8009-H RDS (ON) − Ta IDR − VDS 800 100 Common source (A) Pulse test IDR 600 Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) Common source Ta = 25°C VGS = 10 V 3.5 400 ID = 7A 1.7 200 Pulse test 10 10 1 5 3 VGS = 0 V 1 0 −80 −40 0 40 80 Ambient temperature 120 Ta 0.1 160 (°C) Drain-source voltage (V) Vth (V) 4 Ciss Gate threshold voltage 100 C (pF) VDS Vth − Ta Capacitance – VDS 1000 Capacitance −1.2 −0.8 −0.4 0 Coss 10 1 0.1 Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss 1 Drain-source voltage VDS 2 1 0 −80 100 10 3 (V) Common source VDS = 10 V ID = 1mA Pulse test −40 0 40 80 Ambient temperature 120 Ta 160 (°C) Dynamic input/output characteristics 200 150 (V) VGS 12 VGS (V) VDS 16 Common source ID = 7 A Ta = 25°C Pulse test VDD = 120V VDS 100 8 60V 50 4 0 0 5 Total gate charge 10 Qg 15 Gate-source voltage Drain-source voltage 30V 0 (nC) 5 2007-12-18 TPCA8009-H rth – tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) Transient thermal impedance rth (°C/W) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (3) Tc=25℃ 100 (1) 10 (3) 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 (s) PD – Ta 60 2 PD (W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s (1) 2.5 PD – Tc Drain power dissipation Drain power dissipation PD (W) 3 (2) 1.5 1 0.5 0 0 40 1000 120 80 Ambient temperature Ta 40 20 0 160 (°C) 0 40 80 Case temperature 120 Tc 160 (°C) Safe operating area Drain current ID (A) 100 ID max (Pulse) * t =1 ms * 10 10 ms * ID max(Continuous) DC Operation Tc = 25°C 1 *Single - pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 Drain-source voltage 1000 100 VDS (V) 6 2007-12-18 TPCA8009-H RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-12-18