TPCP8J01 TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type TPCP8J01 Notebook PC Applications Portable Equipment Applications 0.33±0.05 0.05 M A 5 8 0.475 1 4 B 0.65 2.9±0.1 2.8±0.1 Lead(Pb)-Free Small mounting area due to small and thin package Low drain-source ON resistance: P Channel RDS (ON) = 27 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.) Low leakage current: IDSS = −10 μA (VDS = −32 V) Enhancement-mode: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 2.4±0.1 • • • • • • Unit: mm 0.05 M B A 0.8±0.05 Absolute Maximum Ratings (Ta = 25°C) S 0.025 S 0.28 +0.1 -0.11 0.17±0.02 MOSFET +0.13 1.12 -0.12 Characteristics Symbol Rating Unit Drain-source voltage VDSS −32 V Drain-gate voltage (RGS = 20 kΩ) VDGR −32 V Gate-source voltage V 1.12 +0.13 -0.12 0.28 +0.1 -0.11 1. Emitter 2. Drain 3. Drain 4. Drain 5. Source 6. Gate 7. Base 8. Collector VGSS ±20 DC (Note 1) ID −5.5 Pulse (Note 1) IDP −22 PD 2.14 W PD 1.06 W Weight: 0.011 g (typ.) EAS 5.8 mJ Circuit Configuration Avalanche current IAR −3 A Repetitive avalanche energy (Note 4) EAR 0.21 mJ Drain current (t = 5 s) Drain power dissipation (Note 2a) (t = 5 s) Drain power dissipation (Note 2b) Single pulse avalanche energy (Note 3) A JEDEC ― JEITA ― TOSHIBA 2-3V1G 8 7 6 5 3 4 R1 BRT R2 Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V IC 100 mA PC 200 mW Collector current DC Collector power dissipation (Note 1) 2 1 Marking (Note5) 8 Note: For Notes 1 to 5, refer to the next page. 7 6 5 8J01 This transistor is an electrostatic-sensitive device. Handle with caution. ※ 1 2 3 4 Lot No. 1 2006-11-17 TPCP8J01 Common Absolute Maximum Ratings (Ta=25°C ) Characteristics Junction temperature Storage temperature range Symbol Rating Unit TJ 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Max Unit Rth (ch-a) 58.4 °C/W Rth (ch-a) 117.9 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 （Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: “•“ on the lower left of the marking indicates Pin 1. ※ Weekly code (three digits): Week of manufacture (01 for the first week of the year, continues up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPCP8J01 Electrical Characteristics (Ta = 25°C) MOSFET Drain cut-off current Drain-source breakdown voltage Gate threshold voltage IGSS ⎯ ⎯ ±10 μA μA ⎯ ⎯ −10 −32 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ Vth VDS = −10 V, ID = − 1mA −0.8 ⎯ −2.0 Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr VGS = −4 V, ID = −3.0 A ⎯ 38 49 VGS = −10 V, ID = −3.0 A ⎯ 27 35 VDS = −10 V, ID = −3.0 A 4.8 9.6 ⎯ ⎯ 1760 ⎯ ⎯ 200 ⎯ ⎯ 210 ⎯ ID = −3.0 A VOUT ⎯ 2.8 ⎯ ⎯ 12 ⎯ ⎯ 22 ⎯ ⎯ 90 ⎯ ⎯ 34 ⎯ ⎯ 4.7 ⎯ ⎯ 7.2 ⎯ VDS = −10 V, VGS = 0 V, f = 1 MHz 0V VGS −10 V ton Switching time Total gate charge (gate-source plus gate-drain) Unit VDS = −32 V, VGS = 0 V |Yfs| Turn-off time Max ID = −10 mA, VGS = 0 V Forward transfer admittance Fall time Typ. IDSS RDS (ON) Turn-on time VGS = ±16 V, VDS = 0 V Min V (BR) DSS Drain-source ON resistance Rise time Test Condition RL = 5 Ω Gate leakage current Symbol 4.7 Ω Characteristics tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd V V mΩ S pF ns VDD ∼ − −15 V Duty < = 1%, tw = 10 μs VDD ∼ − −24 V, VGS = −10 V, ID = −5.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current (Pulse) (Note 1) IDRP ⎯ ⎯ ⎯ −22 A Forward voltage (diode) VDSF ⎯ ⎯ 1.2 V IDR = −5.5 A, VGS = 0 V 3 2006-11-17 TPCP8J01 BRT Characteristics Symbol Test Condition Min Typ. Max Unit ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 100 ICEO VCB = 50 V, IE = 0 ⎯ ⎯ 500 Emitter cut-off current IEBO VEB = 6 V, IC= 0 0.081 ⎯ 0.15 DC current gain hFE VCE = 5 V, IC= 10 mA 80 ⎯ ⎯ VCE (sat) IC = 5 mA, IB = 0.25 mA ⎯ 0.1 0.3 V Input voltage (ON) VI (ON) VCE = 0.2 V, IC = 5 mA 0.7 ⎯ 1.8 V Input voltage (OFF) VI (OFF) VCE = 5 V, IC = 0.1 mA 0.5 ⎯ 1.0 V Transition frequency fT VCE = 10 V, IC = 5 mA ⎯ 250 ⎯ MHz VCB = 10 V, IE = 0, f = 1 MHz ⎯ 3 6 pF kΩ Collector cut-off current Collector-emitter saturation voltage Collector output capacitance Cob Input resistor R1 ⎯ 7 10 13 Resistor ratio R1/R2 ⎯ 0.191 0.213 0.232 4 nA mA 2006-11-17 TPCP8J01 MOSFET ID – VDS ID – VDS −2. −2.8 Drain current ID (A) −4.5 −3 −4 −10 Common source −3 Ta = 25°C −2.6 Pulse test −3.5 −2.5 −3 −2.4 −2 −2.3 −1 Common source −2.8 −3.5 (A) −10 Drain current ID −5 −8 −10 Ta = 25°C Pulse test −4.5 −2.7 −2.6 −6 −2.5 −4 −2.4 −2.3 −2 −2.2 −2.2 VGS = −2.1V 0 0 −0.2 −0.4 −0.6 Drain-source voltage −0.8 VDS VGS = −2.1 V 0 0 −1.0 −1 (V) Drain-source voltage ID – VGS −10 −3 −2 −4 VDS VDS – VGS −0.5 Common source Common source VDS = −10 V (V) Ta = 25℃ (A) −6 Drain-source voltage Drain current ID Pulse test −0.4 VDS −8 Pulse test −8 Ta = −55°C 100 −4 −0.3 −0.2 ID = −5.5 A −0.1 −2.7 25 0 0 −1 −2 −1.3 −3 Gate-source voltage −4 VGS 0 0 −5 −2 (V) −4 |Yfs| (S) VDS = −10 V VGS −10 (V) Common source Ta = 25°C Drain-source ON resistance RDS (ON) (mΩ) Ta = −55°C −10 25 100 −1 −0.1 −0.1 −8 RDS (ON) – ID 1000 Common source Pulse test −6 Gate-source voltage ⎪Yfs⎪ – ID −100 Forward transfer admittance −5 (V) −1 −10 Pulse test 100 −4 VGS = −10 V 10 1 −0.1 −100 Drain current ID (A) −1 −10 −100 Drain current ID (A) 5 2006-11-17 TPCP8J01 RDS (ON) – Ta 80 −100 Common source Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) ( mΩ) Common source Ta = 25°C Pulse test ID = −5.5A 60 −2.7A −1.3A 40 IDR – VDS −2.7A VGS = −4 V ID = −5.5A −1.3A 20 VGS = −10 V Pulse test −4.5 −10 −10 −3 −2 VGS = 0 V −1 0 −80 −40 0 40 80 120 −1 0 160 0.4 Ambient temperature Ta (°C) 0.8 Drain-source voltage Capacitance – VDS Vth (V) 1000 Coss 100 (V) Common source VDS = −10 V Gate threshold voltage (pF) VDS 2 Vth – Ta Ciss Capacitance C 1.6 −4 10000 10 1.2 Crss Common source VGS = 0 V f = 1 MHz ID = −1 mA −3 Pulse test −2 −1 Ta = 25°C −10 Drain-source voltage VDS 0 −80 −100 (V) −40 0 −40 (2) t = 5 s 1 (1) DC 0.5 (2) DC 0 0 40 80 160 120 ID = −5.5 A Ta = 25°C −30 Ambient temperature Ta (°C) −12 Pulse test VDD = −24 V −6 VDS −20 −12 −8 VGS −10 0 160 −16 Common source (V) VDS 1.5 Drain-source voltage Drain power dissipation PD (W) 2 120 Dynamic input/output characteristics (1) Device mounted on a glass-epoxy board(a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) t = 5 s 80 Ambient temperature Ta (°C) PD – Ta 2.5 40 0 −10 −20 −4 −30 −40 VGS (V) −1 Gate-source voltage 1 −0.1 0 −50 Total gate charge Qg (nC) 6 2006-11-17 TPCP8J01 rth – tw 1000 Device mounted on a glass-epoxy board (b) (Note 2b) Transient thermal impedance rth (°C/W) 100 Device mounted on a glass-epoxy board (a) 10 1 Single Pluse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area 100 Drain current ID (A) ID max (pulsed)* 10 1 ms* 10 ms* 1 *:Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 VDSS max 1 Drain-source voltage 10 100 VDS (V) 7 2006-11-17 TPCP8J01 BRT 8 2006-11-17 TPCP8J01 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2006-11-17