NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce(sat) Transistors, 3x3mm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and optimizing charging performance in the battery-powered portable electronics. http://onsemi.com MOSFET V(BR)DSS Applications •Main Switch and Battery Charging Mux for Portable Electronics •Optimized for Commercial PMUs from Top Suppliers (See Figure 2) 32 mW @ -4.5 V -6.2 A 44 mW @ -2.5 V Low Vce(sat) PNP (Wall) VCEO MAX VEBO MAX IC MAX -30 V -8.0 V -2.0 A Low Vce(sat) PNP (USB) VCEO MAX VEBO MAX IC MAX -30 V -8.0 V -2.0 A 8 MARKING DIAGRAM 1 1 8 1 C 7 2 3 D 6 5 4 mCOOL™ 3x3 Pin Connections (Top View) Figure 1. Simple Schematic ID MAX -12 V Features •High Performance Power MOSFET •Dual-Low Vce(sat) Transistors as Charging Power Mux •3.0x3.0x0.8 mm WDFN Package •Independent Pin-out Provides Circuit Flexibility •Low Profile (<0.8 mm) for Easy Fit in Thin Environments •This is a Pb-Free Device RDS(on) TYP DFN8 CASE 506BC 3116 AYWWG G 3116 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NUS3116MTR2G WDFN8 (Pb-Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 May, 2007 - Rev. 0 Publication Order Number: NUS3116MT/D NUS3116MT P-Channel Power MOSFET Maximum Ratings (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS -12 V Gate-to-Source Voltage VGS ±8.0 V ID -5.47 A Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C t≤5s Power Dissipation (Note 1) TA = 25°C Steady State TA = 25°C t≤5s Continuous Drain Current (Note 2, Minimum Pad) -4.0 Steady State TA = 25°C -6.2 PD 2.2 ID TA = 25°C tp = 10 ms Pulsed Drain Current A -4.4 TA = 85°C Power Dissipation (Note 2) W 1.7 -3.2 PD 1.14 W IDM -25 A TJ, TSTG -55 to 150 °C Source Current (Body Diode)2 IS -2.8 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Symbol Max Units RqJA 110 °C/W Junction-to-Ambient – t < 10 s (Note 2) RqJA 56 °C/W Junction-to-Ambient – Steady State (Note 1) RqJA 72 °C/W Junction-to-Ambient – t < 10 s (Note 1) RqJA 40 °C/W Operating Junction and Storage Temperature THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient – Steady State (Note 2) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size of 0.5 in sq, 1 oz. Cu. P-Channel MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = -250 mA -12.0 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = -250 mA, ref to 25°C Zero Gate Voltage Drain Current IDSS Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Gate-to-Source Leakage Current VGS = 0 V, VDS = -12 V V -10.1 mV/°C TJ = 25°C -1.0 TJ = 125°C -10 IGSS VDS = 0 V, VGS = ±8 V VGS(TH) VGS = VDS, ID = -250 mA mA ±200 nA -1.1 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS -0.45 -0.67 2.68 mV/°C VGS = -4.5 V, ID = -3.0 A 32 40 VGS = -2.5 V, ID = -3.0 A 44 50 VDS = -16 V, ID = -3.0 A 5.9 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% http://onsemi.com 2 mW S NUS3116MT P-Channel MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Units CHARGES, CAPACITANCES AND GATE RESISTANCE VGS = 0 V, f = 1.0 MHz, VDS = -12 V Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(tot) Threshold Gate Charge QG(th) Gate-to-Source Charge QGS 2.2 Gate-to-Drain Charge QGD 2.9 pF 1329 200 116 VGS = -4.5 V, VDS = -12 V, ID = -3.0 A nC 13 1.5 SWITCHING CHARACTERISTICS VGS = -4.5 V, VDD = -12 V, ID = -3.0 A, RG = 3.0 td(on) Turn-On Delay Time Rise Time tr Turn-Of f Delay Time ns 8 17.5 td(off) 80 tf 56.5 Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time Reverse Recovery Charge VGS = 0 V, IS = -1.0 A TJ = 25°C -0.66 TJ = 125°C -0.54 VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.0 A -1.2 V ns 70.8 14.3 tb 56.4 QRR 44 nC 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% Dual-PNP Transistors Maximum Ratings (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Collector-Emitter Voltage VCEO -30 V Collector-Base Voltage VCBO -30 V Emitter-Base Voltage VEBO -8.0 V Collector Current, Continous IC -2.0 A Collector Current, Pulsed (Note 4) IC -6.0 A TJ, TSTG -55 to 150 °C PD 1.5 W RqJA 83 °C/W PD 810 mW RqJA 155 °C/W Operating Junction and Storage Temperature Thermal Resistance Dissipation Thermal Resistance (Note 5) Thermal Resistance Dissipation Thermal Resistance (Note 6) 4. Single Pulse: Pulse Width = 1 ms 5. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 6. Surface-mounted on FR4 board using the minimum recommended pad size of 100 mm2, 1 oz. Cu. http://onsemi.com 3 NUS3116MT Dual-PNP Transistors Electrical Characteristics (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Units Collector-Emitter Voltage VCEO IC = -10 mA, IB = 0 -30 V Collector-Base Voltage VCBO IC = -0.1 mA, IE = 0 -30 V Emitter-Base Voltage VEBO IE = -0.1 mA, IC = 0 -8.0 V Collector-Emitter Cutoff Current ICES VCES = -30 V DC Current Gain (Note 7) hFE IC = -1.0 A, VCE = -2.0 V 100 200 - DC Current Gain (Note 7) hFE IC = -2.0 A, VCE = -2.0 V 100 200 - Collector-Emitter Saturation Voltage VCE(sat) IC = -1.0 A, IB = -0.01 A 0.22 V Collector-Emitter Saturation Voltage VCE(sat) IC = -1.0 A, IB = -0.1 A 0.12 V Collector-Emitter Saturation Voltage VCE(sat) IC = -2.0 A, IB = -0.2 A 0.24 V Input Capacitance Cibo VEB = -0.5 V, f = 1.0 MHz 240 400 pF Output Capacitance Cobo VCB = -3.0 V, f = 1.0 MHz 50 100 pF OFF CHARACTERISTICS -0.1 mA ON CHARACTERISTICS 7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% from WALL 1 8 CHR_ctl 7 USB_ctl 6 BAT_FET_N C from USB 2 3 D R_sns 5 4 Main Battery Supply Voltage VDD Figure 2. Typical Application Circuit http://onsemi.com 4 NUS3116MT TYPICAL CHARACTERISTICS - MOSFET -1.7 - -8.0 V -1.6 V 5 -1.5 V 4 VGS = -1.4 V 3 2 TJ = 25°C 0 1 2 3 4 5 TJ = 25°C 4 TJ = 100°C 3 TJ = -55°C 2 0 0.5 6 1.0 1.5 2.0 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) -V GS, GATE-T O-SOURCE VOLTAGE (V) Figure 3. On-Region Characteristics Figure 4. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 5 1 1 0.05 VGS = 4.5 V TJ = 100°C 0.04 TJ = 25°C 0.03 TJ = -55°C 0.02 1 2 3 4 5 6 -I D, DRAIN CURRENT (A) 0.05 TJ = 25°C VGS = -2.5 V 0.04 VGS = -4.5 V 0.03 0.02 1 2 3 4 5 6 -I D, DRAIN CURRENT (A) Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Drain Current and Gate Voltage 1.6 10,000 VGS = 0 V ID = -3 A VGS = -4.5 V TJ = 150°C 1.4 -I DSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VDS ≥ -10 V 6 -I D, DRAIN CURRENT (A) -I D, DRAIN CURRENT (A) 6 1.2 1,000 1.0 TJ = 100°C 0.8 0.6 -50 100 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (°C) -V DS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. On-Resistance Variation with Temperature Figure 8. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 5 12 NUS3116MT VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 2400 Ciss 2000 1600 Ciss 1200 Crss 800 Coss 400 0 -4 -2 0 2 4 6 10 8 12 6 VDS 5 10 QT 8 4 VGS 3 Qgs 2 6 Qgd 4 ID = -3 A TJ = 25°C 1 0 0 2 4 6 8 10 12 2 0 14 Qg, TOTAL GATE CHARGE (nC) -V GS -V DS GATE-T O-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 10. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 9. Capacitance Variation 10 1,000 -I S, SOURCE CURRENT (A) VGS = 0 V VDD = -12 V ID = -3.0 A VGS = -4.5 V td(off) 100 tf tr 10 td(on) TJ = 25°C 1 TJ = -55°C TJ = 150°C 0.1 0.01 1 1 10 0 100 0.2 0.4 0.6 0.8 1.0 RG, GATE RESISTANCE (W) -V SD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Diode Forward Voltage vs. Current 100 -I D, DRAIN CURRENT (A) t, TIME (ns) 12 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) 2800 -V GS, GATE-T O-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS - MOSFET Single Pulse TC = 25°C Mounted on 2″ sq. FR4 board (0.5″ sq. 2 oz. Cu single sided) with MOSFET die operating. 100 ms 10 1 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit 0.1 dc 0.01 0.1 1 10 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 6 100 NUS3116MT TYPICAL CHARACTERISTICS - MOSFET 1 RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 t, TIME (s) Figure 14. FET Thermal Response http://onsemi.com 7 1E+00 1E+01 1E+02 1E+03 NUS3116MT TJ = 25°C 0.45 0.40 0.35 0.30 0.25 0.20 IC/IB = 10 0.15 0.10 0.05 0 0.001 0.01 0.1 1 -55 °C IC/IB = 100 25°C 150°C 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. Collector Emitter Saturation Voltage vs. Collector Current Figure 16. Collector Emitter Saturation Voltage vs. Collector Current 1.0 725 675 625 575 525 475 425 375 325 275 225 175 125 75 IC/IB = 100 150°C (2.0 V) 25°C (2.0 V) -55 °C (2.0 V) -55 °C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 10 0.001 0.9 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. DC Current Gain vs. Collector Current Figure 18. Base Emitter Saturation Voltage vs. Collector Current 1.0 VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 0.60 0.55 0.50 10 VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN IC/IB = 100 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.60 0.55 0.50 VCE = -1.0 V -55 °C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0.1 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) TYPICAL CHARACTERISTICS - BJT 1.0 10 mA 100 mA 300 mA 500 mA 0.8 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 10 IB, BASE CURRENT (mA) Figure 19. Base Emitter Turn-On Voltage vs. Collector Current Figure 20. Saturation Region http://onsemi.com 8 100 NUS3116MT TYPICAL CHARACTERISTICS - BJT 90 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 300 275 250 225 200 175 150 125 80 70 60 50 40 30 20 100 0 1 2 3 4 5 6 0 7 5 10 15 20 25 30 35 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 21. Input Capacitance Figure 22. Output Capacitance http://onsemi.com 9 40 45 NUS3116MT PACKAGE DIMENSIONS DFN8, 3x3, 0.65P CASE 506BC-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A D B ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ PIN ONE REFERENCE 2X 0.10 C E DIM A A1 A3 b D D2 D3 E E2 e G2 G3 K L TOP VIEW 2X 0.10 C (A3) 0.05 C A MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 3.00 BSC 1.00 1.20 0.95 1.15 3.00 BSC 1.70 1.90 0.65 BSC 0.15 REF 0.20 REF 0.20 --0.25 0.45 8X 0.05 C SEATING PLANE SIDE VIEW A1 SOLDERING FOOTPRINT* C G3 8X L ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ 3.30 1 G2 D2 D3 e 1 1.28 4 2.55 1.10 2X 8X K 8 5 STYLE 1: PIN 1. EMITTER1 2. EMITTER2 3. COLLECTOR 4. SOURCE 5. DRAIN 6. GATE 7. BASE2 8. BASE1 E2 1.80 ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ ÇÇ 8X 0.35 1.15 0.65 PITCH 8X 0.52 DIMENSIONS: MILLIMETERS 8X b *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.10 C A B BOTTOM VIEW 0.05 C NOTE 3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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