SUT575EF Epitaxial planar NPN/PNP silicon transistor Description • Complex type bipolar transistor Feature • Very small package save PCB area • Reduce quantity of parts and mounting cost • Both DN030 chip and DP030 chip in SOT-563F package Package : SOT-563F Ordering Information Type NO. Marking SUT575EF NX□ □ Package Code SOT-563F : Year & Week Code Equivalent circuit & PIN Connections • Equivalent Circuit 3 2 1 Tr1 Tr2 4 5 PIN Connections 1. Emitter 1 2. Base 1 3. Collector 2 4. Emitter 2 5. Base 2 6. Collector 1 6 Absolute Maximum Ratings [Tr1, Tr2] (Ta=25°C) Rating Characteristic Symbol Unit Tr1 Tr2 Collector-base voltage VCBO 15 -15 V Collector-emitter voltage VCEO 12 -12 V Emitter-base voltage VEBO 5 -5 V IC 500 -500 mA Collector current Collector power dissipation Junction temperature Storage temperature range PC※ 150 mW TJ 150 °C Tstg -55~150 °C ※: Total rating KSD-T5U007-001 1 SUT575EF Electrical Characteristics [Tr1] (Ta=25°C) Characteristic Symbol Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0 12 - - V Collector cut-off current ICBO VCB=15V, IE=0 - - 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 - - 0.1 μA DC current gain hFE* VCE=2V, IC=10mA 200 - 450 - Collector-emitter saturation voltage Base-emitter saturation voltage Test Condition Min. Typ. Max. Unit VCE(sat) IC=100mA, IB=10mA - - 0.2 V VCE(sat)* IC=300mA, IB=30mA - - 0.5 V VBE(sat) IC=100mA, IB=10mA - - 1.2 V VBE(sat)* IC=300mA, IB=30mA - - 1.7 V VCE=5V, IC=10mA - 300 - MHz VCB=10V, IE=0, f=1MHz - 3 - pF Transition frequency fT Collector output capacitance Cob *: Pulse test: tP≤300µs, Duty cycle≤2% Electrical Characteristics [Tr2] (Ta=25°C) Characteristic Symbol Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Collector cut-off current ICBO VCB=-15V, IE=0 - - -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 μA DC current gain hFE* VCE=-2V, IC=-10mA 200 - 450 - Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Test Condition Min. Typ. Max. Unit VCE(sat) IC=-100mA, IB=-10mA - - -0.2 V VCE(sat)* IC=-300mA, IB=-30mA - - -0.5 V VBE(sat) IC=-100mA, IB=-10mA - - -1.2 V VBE(sat)* IC=-300mA, IB=-30mA - - -1.7 V VCE=-5V, IC=-10mA - 350 - MHz VCB=-10V, IE=0, f=1MHz - 4 - pF fT Cob *: Pulse test: tP≤300µs, Duty cycle≤2% KSD-T5U007-001 2 SUT575EF Electrical Characteristic Curves [Tr1] Fig. 1 IC -VCE Fig. 2 IC -VBE Fig. 3 hFE-IC Fig. 4 VCE(sat)-IC KSD-T5U007-001 3 SUT575EF Electrical Characteristic Curves [Tr2] Fig. 1 IC -VCE Fig. 2 IC -VBE Fig. 3 hFE-IC Fig. 4 VCE(sat)-IC KSD-T5U007-001 4 SUT575EF Outline Dimension ※ Recommend PCB solder land KSD-T5U007-001 [Unit: mm] 5 SUT575EF The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T5U007-001 6