KODENSHI SUT101N

SUT101N
Epitaxial planar PNP/NPN silicon transistor
Descriptions
• Complex type bipolar transistor
Features
• Reduce quantity of parts and mounting cost
• High collector power dissipation : PC=500mW(Max.)
Package : SOT-26
Ordering Information
Type NO.
Marking
Package Code
SUT101N
VX◇□
SOT-26
◇: Hfe rank,
□ : Year & Week Code
PIN Assignment & Description
6
5
Tr1
4
Pin
Description
1
Base(Tr 1)
2
Emitter(Tr 1/Tr 2)
3
Base(Tr 2)
4
Collector(Tr 2)
5
-
6
Collector(Tr 1)
Tr2
1
2
3
[Pin Assignment]
Absolute Maximum Ratings
Characteristic
(Ta=25°C)
Symbol
Rating
Tr1
Tr2
Unit
Collector-base voltage
VCBO
-40
40
V
Collector-emitter voltage
VCEO
-32
32
V
Emitter-base voltage
VEBO
-5
5
V
IC
-1
1
A(DC)
ICP*
-2
2
A(Pulse)
Collector current
Power dissipation
Junction temperature
Storage temperature range
PC**
0.5
W
TJ
150
°C
Tstg
-55~150
°C
* : Single pulse, tp= 300 ㎲
** : Total rating(Each terminal mounted on a recommended solder land)
KSD-T5P005-001
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SUT101N
Electrical Characteristics [Tr1]
Characteristic
(Ta=25°C)
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-50uA, IE=0
-40
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-32
-
-
V
Emitter-Base breakdown voltage
BVEBO
IC=-50uA, IC=0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-20V, IE=0
-
-
-0.1
μA
Collector cut-off current
IEBO
VCE=-30V, IC=0
-
-
-0.1
μA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-
-
-0.1
μA
DC current gain
hFE
VCE=-3V, IC=-0.1A
100
-
320
-
IC=-500mA, IB=-50mA
-
-0.2
-0.8
V
VCE=-5V,IC=-50mA,f=30Mhz
-
150
-
MHz
VCB=-10V, IE=0, f=1MHz
-
20
30
pF
Collector-Emitter saturation voltage
VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
* hFE rank / O: 100~ 200, Y: 160~ 320
Electrical Characteristics [Tr2]
Characteristic
(Ta=25°C)
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=50 ㎂, IE=0
40
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=1 ㎃, IB=0
32
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=50 ㎂, IC=0
5
-
-
V
Collector cut-off current
ICBO
VCB=20V, IE=0
-
-
0.5
㎂
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
-
0.5
㎂
DC current gain
hFE*
VCE=3V, IC=0.1A
100
-
320
-
IC=500 ㎃, IB=50 ㎃
-
0.15
0.4
V
VCE=5V, IC=50 ㎃
-
150
-
㎒
VCB=10V, IE=0, f=1 ㎒
-
15
-
㎊
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
* : hFE rank / O : 100 ~ 200, Y : 160 ~ 320
KSD-T5P005-001
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SUT101N
Electrical Characteristic Curves
[ Tr1 ]
Fig. 1 PC - Ta
㎃
㎽
Fig. 2 IC - VBE
Fig. 4 hFE - IC
Fig. 3 IC - VCE
㎃
㎂
㎂
㎂
㎂
㎂
㎂
㎂
㎂
㎂
㎃
[ Tr2 ]
Fig. 5 VCE(sat) - IC
㎃
Fig. 6 IC - VBE
㎃
KSD-T5P005-001
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SUT101N
Fig. 8 VCE(sat) - IC
㎃
Fig. 7 IC - VCE
㎃
㎃
㎃
㎃
㎃
㎃
㎃
㎃
㎃
㎃
Fig. 9 hFE - IC
㎃
KSD-T5P005-001
4
SUT101N
SOT-26 Outline Dimension(mm)
※ Recommend PCB solder land
KSD-T5P005-001
[Unit: mm]
5
SUT101N
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
KSD-T5P005-001
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