S-LBSS84WT1G

LESHAN RADIO COMPANY, LTD.
POWER MOSFET
P-CHANNEL 130mAmps,50Volts
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters,
load switching , power management in portable and battery–
powered products such as computers , printers , cellular and
cordless telephones.
LBSS84WT1G
S-LBSS84WT1G
●FEATURES
1)Energy Efficient
2)Miniature SOT–323 Surface Mount Package Saves Board Space
3)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
4)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
3
1
2
SOT –323
3 Drain
1
Gate
●DEVICE MARKING AND ORDERING INFORMATION
Shipping
Device
Marking
3000/Tape&Reel
LBSS84WT1G
PD
10000/Tape&Reel
LBSS84WT3G
PD
-
2
Source
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Symbol
Limits
Unit
Drain–to–Source Voltage
VDSS
50
V
V
GS
Gate–to–Source Voltage – Continuous
±20
V
mA
Drain Current
– Continuous @ TA = 25°C
ID
130
– Pulsed Drain Current (tp ≤ 10 μs)
IDM
520
Total Power Dissipation @ TA = 25°C
PD
225
mW
Junction and Storage temperature
Tj,Tstg −55∼+150 ℃
℃/W
Thermal Resistance – Junction–to–Ambient RΘJA
556
260
℃
TL
Maximum Lead Temperature for
SolderingPurposes, for 10 seconds
June,2015
Rev.B 1/5
LESHAN RADIO COMPANY, LTD.
LBSS84WT1G，S-LBSS84WT1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
OFF CHARACTERISTICS
Characteristic
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
Gate–Source Threaded Voltage
(VDS = VGS, ID = 250μAdc)
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
Symbol
VBR(DSS)
Min.
Typ.
Max.
50
–
–
Unit
V
μA
IDSS
–
–
–
–
–
–
0.1
15
60
–
–
±10
IGSS
nA
VGS(th)
V
0.8
–
2.0
–
5.0
10
RDS(on)
Ohms
mS
|yfs|
50
–
–
DYNAMIC CHARACTERISTICS
Input Capacitance(VDS = 5.0 Vdc)
Output Capacitance(VDS = 5.0 Vdc)
Transfer Capacitance(VDG = 5.0 Vdc)
Ciss
COss
CRss
–
–
–
30
10
5
–
–
–
pF
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
(VDD = –15 Vdc,
Rise Time
ID = –2.5 Adc,RL = 50
Turn–Off Delay Time
Ω)
Fall Time
Gate Charge
td(on）
tr
td(off)
tf
QT
–
–
–
–
–
2.5
1
16
8
6000
–
–
–
–
–
ns
–
–
–
–
–
2.5
0.13
0.52
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
Pulsed Current
ISM
Forward Voltage (Note 2.)
VSD
pC
A
V
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
June,2015
Rev.B 2/5
LESHAN RADIO COMPANY, LTD.
LBSS84WT1G，S-LBSS84WT1G
ELRCTRICAL CHARACTERISTICS CURVES
0.6
0.50
VDS=10V
0.5
0.40
ID, Drain Current (A)
ID, Drain Current (A)
TJ=25℃
0.45
0.4
0.3
0.2
0.35
0.30
0.25
0.20
0.15
0.10
0.1
0.05
0.00
0.0
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
-55℃
150℃
20
8
18 VGS=4.5V
7
16
14
12
10
8
6
4
2
0
0.1
0.2
0.3
0.4
0.5
0.6
ID, Drain Current (A)
VGS=4.5V Tj=25℃
VGS=4.5V Tj=150℃
VGS=4.5V Tj=-55℃
FIG.3 On-Resistance versus Drain Current
June,2015
3
4
5
6
7
8
9
10
VGS=2.25V
VGS=2.5V
VGS=2.75V
VGS=3V
VGS=3.25V
VGS=3.5V
FIG.2 On-Region Characteristics
RDSon, Drain-to-Source Resistance (Ω)
RDSon, Drain-to-Source Resistance (Ω)
FIG.1 Transfer Characteristics
0
2
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
25℃
1
VGS=10V
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
ID, Drain Current (A)
VGS=10V Tj=25℃
VGS=10V Tj=150℃
VGS=10V Tj=-55℃
FIG.4 On-Resistance versus Drain Current
Rev.B 3/5
LESHAN RADIO COMPANY, LTD.
LBSS84WT1G，S-LBSS84WT1G
9
1
8
6
0.1
5
ID (V)
RDSon (℃)
7
4
3
0.01
2
1
-55 -30 -5
20
45 70
Tj (℃)
95 120 145
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (V)
VGS=4.5V ID=0.13A
VGS=10V ID=0.52A
FIG.5 On-Resistance Variation with Temperature
June,2015
150℃
-55℃
25℃
FIG.6 Body Diode Forward Voltage
Rev.B 4/5
LESHAN RADIO COMPANY, LTD.
LBSS84WT1G，S-LBSS84WT1G
SC-70
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
e1
3
E
HE
1
2
b
e
A
0.05 (0.002)
c
A2
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
SOLDERING FOOTPRINT*
0.65
0.025
XX
1.9
0.075
0.095
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”,
may or may not be present.
0.9
0.035
June,2015
0.016
0.010
0.087
0.053
0.055
1
M
SCALE 10:1
0.079
MAX
0.040
0.004
XXM
0.65
0.025
0.7
0.028
0.012
0.004
0.071
0.045
0.047
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
GENERIC
MARKING DIAGRAM
L
A1
MIN
0.032
0.000
mm inches
Rev.B 5/5