LESHAN RADIO COMPANY, LTD. POWER MOSFET P-CHANNEL 130mAmps,50Volts These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, load switching , power management in portable and battery– powered products such as computers , printers , cellular and cordless telephones. LBSS84LT1G S-LBSS84LT1G ●FEATURES 1)Energy Efficient 2)Miniature SOT–23 Surface Mount Package Saves Board Space 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. 4)S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 SOT-23 ●DEVICE MARKING AND ORDERING INFORMATION Shipping Device Marking 3000/Tape&Reel LBSS84LT1G PD 10000/Tape&Reel LBSS84LT3G PD ●MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Limits Unit Drain–to–Source Voltage VDSS 50 V VGS Gate–to–Source Voltage – Continuous ±20 V mA Drain Current – Continuous @ TA = 25°C ID 130 – Pulsed Drain Current (tp ≤ 10 μs) IDM 520 Total Power Dissipation @ TA = 25°C PD 225 mW Junction and Storage temperature Tj,Tstg −55∼+150 ℃ Thermal Resistance – Junction–to–Ambient RΘJA ℃/W 556 ℃ 260 TL Maximum Lead Temperature for SolderingPurposes, for 10 seconds May,2015 Rev.B 1/5 LESHAN RADIO COMPANY, LTD. LBSS84LT1G，S-LBSS84LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1.) Gate–Source Threaded Voltage (VDS = VGS, ID = 250μAdc) Static Drain–to–Source On–Resistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) Symbol VBR(DSS) Min. Typ. Max. 50 – – – – – – – – 0.1 15 60 Unit V μA IDSS IGSS nA – – ±10 VGS(th) V 0.8 – 2.0 RDS(on) Ohms – 5.0 10 mS |yfs| 50 – – DYNAMIC CHARACTERISTICS Input Capacitance(VDS = 5.0 Vdc) Output Capacitance(VDS = 5.0 Vdc) Transfer Capacitance(VDG = 5.0 Vdc) Ciss COss CRss – – – 30 10 5 – – – pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time (VDD = –15 Vdc, Rise Time ID = –2.5 Adc,RL = 50 Turn–Off Delay Time Ω) Fall Time Gate Charge td(on） tr td(off) tf QT – – – – – 2.5 1 16 8 6000 – – – – – ns – – – – – 2.5 0.13 0.52 – SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current IS Pulsed Current ISM Forward Voltage (Note 2.) VSD pC A V 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. May,2015 Rev.B 2/5 LESHAN RADIO COMPANY, LTD. LBSS84LT1G，S-LBSS84LT1G ELRCTRICAL CHARACTERISTICS CURVES 0.6 0.50 VDS=10V 0.5 0.40 ID, Drain Current (A) ID, Drain Current (A) TJ=25℃ 0.45 0.4 0.3 0.2 0.35 0.30 0.25 0.20 0.15 0.10 0.1 0.05 0.00 0.0 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 -55℃ 150℃ FIG.1 Transfer Characteristics 3 4 5 6 7 8 9 10 VGS=2.25V VGS=2.5V VGS=2.75V VGS=3V VGS=3.25V VGS=3.5V FIG.2 On-Region Characteristics 8 20 VGS=4.5V 18 16 14 12 10 8 6 4 2 0 0 0.1 VGS=10V 7 0.2 0.3 0.4 0.5 0.6 ID, Drain Current (A) VGS=4.5V Tj=25℃ VGS=4.5V Tj=150℃ VGS=4.5V Tj=-55℃ FIG.3 On-Resistance versus Drain Current RDSon, Drain-to-Source Resistance (Ω) RDSon, Drain-to-Source Resistance (Ω) 2 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) 25℃ 1 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, Drain Current (A) VGS=10V Tj=25℃ VGS=10V Tj=150℃ VGS=10V Tj=-55℃ FIG.4 On-Resistance versus Drain Current May,2015 Rev.B 3/5 LESHAN RADIO COMPANY, LTD. LBSS84LT1G，S-LBSS84LT1G 9 1 8 6 0.1 5 ID (V) RDSon (℃) 7 4 3 0.01 2 1 -55 -30 -5 20 45 70 Tj (℃) 95 120 145 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (V) VGS=4.5V ID=0.13A VGS=10V ID=0.52A FIG.5 On-Resistance Variation with Temperature May,2015 150℃ -55℃ 25℃ FIG.6 Body Diode Forward Voltage Rev.B 4/5 LESHAN RADIO COMPANY, LTD. LBSS84LT1G，S-LBSS84LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 May,2015 inches mm Rev.B 5/5