TI TPS730XX_07

 TPS730xx
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SBVS054H – NOVEMBER 2004 – REVISED OCTOBER 2007
LOW-NOISE, HIGH PSRR, RF 200-mA
LOW-DROPOUT LINEAR REGULATORS
FEATURES
DESCRIPTION
1
• 200-mA RF Low-Dropout Regulator
With Enable
• Available in Fixed Voltages from 1.8V to 3.3V
and Adjustable (1.22V to 5.5V)
• High PSRR (68dB at 100Hz)
• Ultralow-Noise (33μVRMS, TPS73018)
• Fast Start-Up Time (50μs)
• Stable With a 2.2μF Ceramic Capacitor
• Excellent Load/Line Transient Response
• Very Low Dropout Voltage (120mV at 200mA)
• 5- and 6-Pin SOT23 (DBV), and Wafer Chip
Scale (YZQ) Packages
The TPS730xx family of low-dropout (LDO)
low-power linear voltage regulators features high
power-supply rejection ratio (PSRR), ultralow-noise,
fast start-up, and excellent line and load transient
responses a small SOT23 package. NanoStar™
packaging gives an ultrasmall footprint as well as an
ultralow profile and package weight, making it ideal
for portable applications such as handsets and PDAs.
Each device in the family is stable, with a small 2.2μF
ceramic capacitor on the output. The TPS730xx
family uses an advanced, proprietary BiCMOS
fabrication process to yield low dropout voltages (e.g.,
120mV at 200mA, TPS73030). Each device achieves
fast start-up times (approximately 50μs with a
0.001μF bypass capacitor) while consuming low
quiescent current (170μA typical). Moreover, when
the device is placed in standby mode, the supply
current is reduced to less than 1μA. The TPS73018
exhibits approximately 33μVRMS of output voltage
noise at 1.8V output with a 0.01μF bypass capacitor.
Applications with analog components that are
noise-sensitive, such as portable RF electronics,
benefit from the high PSRR and low-noise features
as well as the fast response time.
234
APPLICATIONS
•
•
•
•
•
RF: VCOs, Receivers, ADCs
Audio
Cellular and Cordless Telephones
Bluetooth®, Wireless LAN
Handheld Organizers, PDAs
DBV PACKAGE
(TOP VIEW)
GND
2
EN
3
5
OUT
4
NR
Fixed Option
DBV PACKAGE
(TOP VIEW)
IN
1
6
OUT
GND
2
5
FB
EN
3
4
NR
Adjustable Option
YZQ PACKAGE
(TOP VIEW)
IN
C3
A3
EN
C1
B2
A1
OUT
TPS73028
TPS73028
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
RIPPLE REJECTION
vs
FREQUENCY
0.30
100
VIN = 3.8 V
COUT = 2.2 µF
CNR = 0.1 µF
0.25
90
IOUT = 200 mA
80
Ripple Rejection (dB)
1
Output Spectral Noise Density (µV/√Hz)
IN
0.20
0.15
IOUT = 1 mA
0.10
IOUT = 200 mA
70
60
50
40
IOUT = 10 mA
30
20
0.05
VIN = 3.8 V
COUT = 10 µF
CNR = 0.01 µF
10
0
0
100
1k
10 k
Frequency (Hz)
NR
100 k
10
100
1k
10 k
100 k
1M
10 M
Frequency (Hz)
GND
Figure 1.
1
2
3
4
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NanoStar is a trademark of Texas Instruments.
Bluetooth is a registered trademark of Bluetooth Sig, Inc.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2004–2007, Texas Instruments Incorporated
TPS730xx
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SBVS054H – NOVEMBER 2004 – REVISED OCTOBER 2007
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
PRODUCT
TPS730xxyyyz
(1)
VOUT
XX is nominal output voltage (for example, 28 = 2.8V, 01 = Adjustable).
YYY is package designator.
Z is package quantity.
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
Over operating temperature range (unless otherwise noted) (1)
UNIT
VIN range
–0.3V to +6V
VEN range
–0.3V to +6V
VOUT range
–0.3V to VIN + 0.3V
Peak output current
Internally limited
ESD rating, HBM
2kV
ESD rating, CDM
500V
Continuous total power dissipation
See Dissipation Ratings Table
Junction temperature range
–40°C to +150°C
Storage temperature range, Tstg
–65°C to +150°C
(1)
2
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
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DISSIPATION RATINGS TABLE
TA ≤ +25°C
POWER
RATING
TA = +70°C
POWER
RATING
TA = +85°C
POWER
RATING
BOARD
PACKAGE
RθJC
RθJA
DERATING FACTOR
ABOVE TA = +25°C
Low-K (1)
DBV
65°C/W
255°C/W
3.9mW/°C
390mW
215mW
155mW
(2)
DBV
65°C/W
180°C/W
5.6mW/°C
560mW
310mW
225mW
Low-K (1)
YZQ
27°C/W
255°C/W
3.9mW/°C
390mW
215mW
155mW
High-K (2)
YZQ
27°C/W
190°C/W
5.3mW/°C
530mW
296mW
216mW
High-K
(1)
(2)
The JEDEC low-K (1s) board design used to derive this data was a 3-inch × 3-inch, two layer board with 2 ounce copper traces on top
of the board.
The JEDEC high-K (2s2p) board design used to derive this data was a 3-inch × 3-inch, multilayer board with 1 ounce internal power and
ground planes and 2 ounce copper traces on top and bottom of the board.
ELECTRICAL CHARACTERISTICS
Over recommended operating temperature range TJ = –40 to +125°C, VEN = VIN, VIN = VOUT(nom) + 1 V (1), IOUT = 1mA,
COUT = 10μF, CNR = 0.01μF (unless otherwise noted). Typical values are at +25°C.
PARAMETER
TEST CONDITIONS
MIN
VIN Input voltage (1)
IOUT Continuous output current
VFB Internal reference (TPS73001)
Line regulation (ΔVOUT%/ΔVIN)
(1)
V
200
mA
1.225
–2%
VOUT + 1V ≤ VIN ≤ 5.5V
VOUT(nom)
0μA ≤ IOUT ≤ 200mA, TJ = +25°C
Dropout voltage (2)(VIN = VOUT(nom) – 0.1V)
IOUT = 200mA
Output current limit
VOUT = 0V
GND pin current
0μA ≤ IOUT ≤ 200mA
170
Shutdown current (3)
VEN = 0V, 2.7V ≤ VIN ≤ 5.5V
0.07
FB pin current
VFB = 1.8V
TPS73028
1.250
V
5.5 – VDO
V
+2%
V
0.05
Load regulation (ΔVOUT%/ΔIOUT)
Power-supply ripple rejection
UNIT
0
VFB
0μA ≤ IOUT ≤ 200mA, 2.75V ≤ VIN < 5.5V
Output voltage accuracy
MAX
5.5
1.201
Output voltage range (TPS73001)
TYP
2.7
%/V
5
120
285
mV
210
mV
600
mA
250
μA
1
μA
1
μA
f = 100Hz, TJ = +25°C, IOUT = 200mA
68
dB
Output noise voltage (TPS73018)
BW = 200Hz to 100kHz,
IOUT = 200mA
CNR = 0.01μF
33
μVRMS
Time, start-up (TPS73018)
RL = 14Ω, COUT = 1μF
CNR = 0.001μF
High level enable input voltage
2.7V ≤ VIN ≤ 5.5V
1.7
VIN
Low level enable input voltage
2.7V ≤ VIN ≤ 5.5V
0
0.7
V
EN pin current
VEN = 0
–1
1
μA
UVLO threshold
VCC rising
2.25
UVLO hysteresis
(1)
(2)
(3)
μs
50
2.65
100
V
V
mV
Minimum VIN is 2.7V or VOUT + VDO, whichever is greater.
Dropout is not measured for the TPS73018 and TPS73025 since minimum VIN = 2.7V.
For adjustable versions, this applies only after VIN is applied; then VEN transitions high to low.
Copyright © 2004–2007, Texas Instruments Incorporated
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FUNCTIONAL BLOCK DIAGRAMS
ADJUSTABLE VERSION
IN
OUT
UVLO
2.45V
59 k
Current
Sense
ILIM
GND
R1
SHUTDOWN
_
+
FB
EN
R2
UVLO
Thermal
Shutdown
Bandgap
Reference
1.22V
IN
External to
the Device
QuickStart
250 kΩ
Vref
NR
FIXED VERSION
IN
OUT
UVLO
2.45V
Current
Sense
GND
SHUTDOWN
ILIM
_
R1
+
EN
UVLO
R2
Thermal
Shutdown
R2 = 40 kΩ
QuickStart
Bandgap
Reference
1.22V
IN
250 kΩ
Vref
NR
Table 1. Terminal Functions
TERMINAL
NAME
4
SOT23
ADJ
SOT23
FIXED
WCSP
FIXED
DESCRIPTION
NR
4
4
B2
Connecting an external capacitor to this pin bypasses noise generated by the internal
bandgap. This improves power-supply rejection and reduces output noise.
EN
3
3
A3
Driving the enable pin (EN) high turns on the regulator. Driving this pin low puts the regulator
into shutdown mode. EN can be connected to IN if not used.
FB
5
N/A
N/A
This terminal is the feedback input voltage for the adjustable device.
GND
2
2
A1
Regulator ground
IN
1
1
C3
Input to the device.
OUT
6
5
C1
Output of the regulator.
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TYPICAL CHARACTERISTICS (SOT23 PACKAGE)
TPS73028
OUTPUT VOLTAGE
vs
OUTPUT CURRENT
TPS73028
OUTPUT VOLTAGE
vs
JUNCTION TEMPERATURE
2.805
250
2.805
VIN = 3.8 V
COUT = 10 µF
TJ = 25°C
2.804
2.803
VIN = 3.8 V
COUT = 10 µF
2.800
VOUT (V)
2.800
2.799
IGND (µA)
2.795
2.801
2.790
IOUT = 200 mA
2.785
2.798
100
50
2.780
VIN = 3.8 V
COUT = 10 µF
2.796
2.795
0
50
100
150
2.775
200
IOUT = 200 mA
150
2.797
−40 −25 −10 5
0
−40 −25 −10 5
20 35 50 65 80 95 110 125
IOUT (mA)
20 35 50 65 80 95 110 125
TJ (°C)
TJ (°C)
Figure 2.
Figure 3.
Figure 4.
TPS73028 OUTPUT SPECTRAL
NOISE DENSITY
vs
FREQUENCY
ROOT MEAN SQUARE OUTPUT
NOISE
vs
CNR
TPS73028
DROPOUT VOLTAGE
vs
JUNCTION TEMPERATURE
1.6
180
60
1.2
CNR = 0.001 µF
CNR = 0.0047 µF
1.0
CNR = 0.01 µF
0.8
0.6
CNR = 0.1 µF
0.4
VOUT = 2.8 V
IOUT = 200 mA
COUT = 10 µF
50
VIN = 2.7 V
COUT = 10 µF
160
140
40
120
VDO (mV)
VIN = 3.8 V
IOUT = 200 mA
COUT = 10 µF
1.4
RMS, Output Noise (VRMS)
Output Spectral Noise Density (µV/√Hz)
IOUT = 1 mA
200
IOUT = 1 mA
2.802
VOUT (V)
TPS73028
GROUND CURRENT
vs
JUNCTION TEMPERATURE
30
20
IOUT = 200 mA
100
80
60
40
10
0.2
IOUT = 10 mA
20
BW = 100 Hz to 100 kHz
0
100
1k
10 k
0
0.001
100 k
0.01
CNR (µF)
Frequency (Hz)
0
−40 −25 −10 5
0.1
20 35 50 65 80 95 110 125
TJ (°C)
Figure 5.
Figure 6.
Figure 7.
TPS73028
RIPPLE REJECTION
vs
FREQUENCY
TPS73028 OUTPUT VOLTAGE,
ENABLE VOLTAGE
vs
TIME (START-UP)
TPS73028
LINE TRANSIENT RESPONSE
90
4
VEN (V)
IOUT = 200 mA
70
2
0
60
50
CNR = 0.001 µF
30
VIN = 3.8 V
COUT = 10 µF
CNR = 0.01 µF
10
0
10
100
1k
4.8
3.8
IOUT = 200 mA
COUT = 2.2 µF
CNR = 0.01 µF
20
3
IOUT = 10 mA
20
VIN = 3.8 V
VOUT = 2.8 V
IOUT = 200 mA
COUT = 2.2 µF
TJ = 25°C
2
CNR = 0.0047 µF
1
CNR = 0.01 µF
VIN (mV)
40
VOUT (V)
Ripple Rejection (dB)
80
VOUT (mV)
100
dv
0.4 V
+
µs
dt
0
-20
0
10 k
100 k
1M
10 M
Frequency (Hz)
Figure 8.
Copyright © 2004–2007, Texas Instruments Incorporated
0
20 40
60 80 100 120 140 160 180 200
0
10
20
30 40
50 60
Time (µs)
Time (µs)
Figure 9.
Figure 10.
70 80
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TYPICAL CHARACTERISTICS (SOT23 PACKAGE) (continued)
TPS73028
LOAD TRANSIENT RESPONSE
DROPOUT VOLTAGE
vs
OUTPUT CURRENT
POWER-UP/POWER-DOWN
250
VIN = 3.8 V
COUT = 10 µF
VOUT = 3 V
RL = 15 Ω
TJ = 125°C
−20
di
0.02A
+
µs
dt
300
VDO (mV)
−40
IOUT (mA)
200
0
500 mV/div
∆VOUT (mV)
20
VIN
TJ = 25°C
100
VOUT
200
0
TJ = −55°C
50
1mA
100
0
150
0
50 100 150 200 250 300 350 400 450 500
0
1s/div
20 40 60 80 100 120 140 160 180 200
IOUT (mA)
Time (µs)
Figure 11.
Figure 12.
TYPICAL REGIONS OF STABILITY
EQUIVALENT SERIES RESISTANCE
(ESR)
vs
OUTPUT CURRENT
100
COUT = 2.2 µF
VIN = 5.5 V, VOUT ≥ 1.5 V
TJ = −40°C to 125°C
10
Region of Instability
1
0.1
Region of Stability
0.01
COUT = 10 µF
VIN = 5.5 V
TJ = −40°C to 125°C
10
Region of Instability
1
0.1
Region of Stability
0.01
0
0.02
0.04
0.06
IOUT (A)
Figure 14.
6
TYPICAL REGIONS OF STABILITY
EQUIVALENT SERIES RESISTANCE
(ESR)
vs
OUTPUT CURRENT
ESR, Equivalent Series Resistance (Ω)
ESR, Equivalent Series Resistance (Ω)
100
Figure 13.
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0.08
0.20
0
0.02
0.04
0.06
0.08
0.20
IOUT (A)
Figure 15.
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SBVS054H – NOVEMBER 2004 – REVISED OCTOBER 2007
APPLICATION INFORMATION
The TPS730xx family of low-dropout (LDO) regulators has been optimized for use in noise-sensitive
battery-operated equipment. The device features extremely low dropout voltages, high PSRR, ultralow output
noise, low quiescent current (170μA typically), and enable-input to reduce supply currents to less than 1μA when
the regulator is turned off.
A typical application circuit is shown in Figure 16.
VIN
VOUT
VIN
IN
VOUT
OUT
TPS730xx
0.1µF
EN
GND
NR
2.2µF
0.01µF(1)
NOTE: (1) This capacitor is optional.
Figure 16. Typical Application Circuit
External Capacitor Requirements
A 0.1μF or larger ceramic input bypass capacitor, connected between IN and GND and located close to the
TPS730xx, is required for stability and improves transient response, noise rejection, and ripple rejection. A
higher-value input capacitor may be necessary if large, fast-rise-time load transients are anticipated or the device
is located several inches from the power source.
Like most low dropout regulators, the TPS730xx requires an output capacitor connected between OUT and GND
to stabilize the internal control loop. The minimum recommended capacitance is 2.2μF. Any 2.2μF or larger
ceramic capacitor is suitable, provided the capacitance does not vary significantly over temperature. If load
current is not expected to exceed 100mA, a 1.0μF ceramic capacitor can be used.
The internal voltage reference is a key source of noise in an LDO regulator. The TPS730xx has an NR pin which
is connected to the voltage reference through a 250kΩ internal resistor. The 250kΩ internal resistor, in
conjunction with an external bypass capacitor connected to the NR pin, creates a low pass filter to reduce the
voltage reference noise and, therefore, the noise at the regulator output. In order for the regulator to operate
properly, the current flow out of the NR pin must be at a minimum, because any leakage current creates an IR
drop across the internal resistor thus creating an output error. Therefore, the bypass capacitor must have
minimal leakage current. The bypass capacitor should be no more than 0.1μF to ensure that it is fully charged
during the quickstart time provided by the internal switch shown in the Functional Block Diagrams.
As an example, the TPS73018 exhibits only 33μVRMS of output voltage noise using a 0.01μF ceramic bypass
capacitor and a 2.2μF ceramic output capacitor. Note that the output starts up slower as the bypass capacitance
increases due to the RC time constant at the NR pin that is created by the internal 250kΩ resistor and external
capacitor.
Board Layout Recommendation to Improve PSRR and Noise Performance
To improve ac measurements like PSRR, output noise, and transient response, it is recommended that the board
be designed with separate ground planes for VIN and VOUT, with each ground plane connected only at the GND
pin of the device. In addition, the ground connection for the bypass capacitor should connect directly to the GND
pin of the device.
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Power Dissipation and Junction Temperature
Specified regulator operation is assured to a junction temperature of +125°C; the maximum junction temperature
should be restricted to +125°C under normal operating conditions. This restriction limits the power dissipation the
regulator can handle in any given application. To ensure the junction temperature is within acceptable limits,
calculate the maximum allowable dissipation, PD(max), and the actual dissipation, PD, which must be less than or
equal to PD(max).
The maximum power dissipation limit is determined using Equation 1:
T max *T A
P D(max) + J
R QJA
(1)
Where:
•
•
•
TJmax is the maximum allowable junction temperature.
RθJA is the thermal resistance junction-to-ambient for the package (see the Dissipation Ratings Table).
TA is the ambient temperature.
The regulator dissipation is calculated using Equation 2:
P D + ǒVIN*V OUTǓ I OUT
(2)
Power dissipation resulting from quiescent current is negligible. Excessive power dissipation triggers the thermal
protection circuit.
Programming the TPS73001 Adjustable LDO Regulator
The output voltage of the TPS73001 adjustable regulator is programmed using an external resistor divider as
shown in Figure 17. The output voltage is calculated using Equation 3:
V OUT + VREF
ǒ1 ) RR Ǔ
1
2
(3)
Where:
•
VREF = 1.225V typ (the internal reference voltage)
Resistors R1 and R2 should be chosen for approximately 50μA divider current. Lower value resistors can be used
for improved noise performance, but the solution consumes more power. Higher resistor values should be
avoided as leakage current into/out of FB across R1/R2 creates an offset voltage that artificially
increases/decreases the feedback voltage and thus erroneously decreases/increases VOUT. The recommended
design procedure is to choose R2 = 30.1kΩ to set the divider current at 50μA, C1 = 15pF for stability, and then
calculate R1 using Equation 4:
R1 =
VOUT
VREF
- 1 ´ R2
(4)
In order to improve the stability of the adjustable version, it is suggested that a small compensation capacitor be
placed between OUT and FB. For voltages < 1.8V, the value of this capacitor should be 100pF. For voltages >
1.8V, the approximate value of this capacitor can be calculated as shown in Equation 5:
(3 x 10*7) x (R 1 ) R 2)
C1 +
(R 1 x R2)
(5)
The suggested value of this capacitor for several resistor ratios is shown in the table below. If this capacitor is
not used (such as in a unity-gain configuration) or if an output voltage < 1.8V is chosen, then the minimum
recommended output capacitor is 4.7μF instead of 2.2μF.
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OUTPUT VOLTAGE
PROGRAMMING GUIDE
VIN
IN
1m F
OUT
TPS73001
EN
NR
VOUT
R1
C1
2.2mF
GND
FB
0.01mF
R2
OUTPUT
VOLTAGE
R1
R2
C1
1.22V
short
open
0pF
2.5V
31.6kW
30.1kW
22pF
3.3V
51kW
30.1kW
15pF
3.6V
59kW
30.1kW
15pF
Figure 17. TPS73001 Adjustable LDO Regulator Programming
Regulator Protection
The TPS730xx PMOS-pass transistor has a built-in back diode that conducts reverse current when the input
voltage drops below the output voltage (for example, during power-down). Current is conducted from the output
to the input and is not internally limited. If extended reverse voltage operation is anticipated, external limiting
might be appropriate.
The TPS730xx features internal current limiting and thermal protection. During normal operation, the TPS730xx
limits output current to approximately 400mA. When current limiting engages, the output voltage scales back
linearly until the overcurrent condition ends. While current limiting is designed to prevent gross device failure,
care should be taken not to exceed the power dissipation ratings of the package or the absolute maximum
voltage ratings of the device. If the temperature of the device exceeds approximately +165°C, thermal-protection
circuitry shuts it down. Once the device has cooled down to below approximately +140°C, regulator operation
resumes.
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TPS730xxYZQ NanoStar™ Wafer Chip Scale Information
0,79
0,84
1,30
1,34
0.625 Max
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. NanoStar package configuration.
D. This package is tin-lead (SnPb); consult the factory for availability of lead-free material.
NanoStar is a trademark of Texas Instruments.
Figure 18. NanoStar™ Wafer Chip Scale Package
10
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